發(fā)布時(shí)間：2018-05-07 11:12

  本文選題：TD-LTE + 雙極化MIMO介質(zhì)諧振器天線��； 參考：《大連海事大學(xué)》2017年碩士論文

【摘要】：隨著移動(dòng)通信技術(shù)的快速發(fā)展,由中國(guó)提出的具有自主知識(shí)產(chǎn)權(quán)的第四代移動(dòng)通信系統(tǒng)(寬帶接入和分布網(wǎng)絡(luò)系統(tǒng))標(biāo)準(zhǔn)(TD-LTE)已經(jīng)成功入圍國(guó)際電信聯(lián)盟的4G候選標(biāo)準(zhǔn)。TD-LTE中一個(gè)重要技術(shù)就是引入了 MIMO技術(shù),其對(duì)整個(gè)系統(tǒng)的容量和傳輸速率都有很大的影響。TD-LTE無(wú)線接收機(jī)作為移動(dòng)系統(tǒng)的重要組成部分,對(duì)整個(gè)通信系統(tǒng)的通信質(zhì)量起到至關(guān)重要的作用。因此,研究應(yīng)用于TD-LTE接收系統(tǒng)的射頻前端器件具有理論意義和實(shí)用價(jià)值。TD-LTE的工作頻段大致分為三個(gè)頻段:1880～1900MHz、2300～2390MHz和2555～2655MHz。若將 2300～2390MHz 與 2555～2655MHz 頻段合并,則 TD-LTE 還可看成是由2300～2655MHz的高頻段和1880～1900MHz的低頻段構(gòu)成的雙頻帶系統(tǒng)。由于高頻段帶寬較寬,故也可稱為寬頻帶系統(tǒng)。TD-LTE接收機(jī)的射頻前端主要包括:天線、濾波器和低噪聲放大器等器件。因此,本文緊緊圍繞TD-LTE的射頻前端器件展開研究,設(shè)計(jì)了應(yīng)用于TD-LTE的MIMO雙極化天線、三頻帶濾波器和低噪聲放大器。本論文的主要工作和成果可概括為:(1)設(shè)計(jì)了兩款TD-LTE介質(zhì)諧振器天線。由于介質(zhì)諧振器具有體積小、性能穩(wěn)定、Q值高、饋電方便等優(yōu)點(diǎn),所以本文采用介質(zhì)諧振器天線結(jié)構(gòu)形式進(jìn)行設(shè)計(jì),設(shè)計(jì)的兩款天線分別是:①TD-LTE雙頻雙極化介質(zhì)諧振器天線。為了實(shí)現(xiàn)雙頻的工作特性,激勵(lì)介質(zhì)諧振器的單模模式,通過(guò)將其與微帶天線相結(jié)合,實(shí)現(xiàn)了高頻部分的寬帶效果;采用"H"形縫隙耦合饋電,且讓其諧振在低頻部分,實(shí)現(xiàn)了低頻工作特性;并采用四分之一波長(zhǎng)阻抗變換器和開路支節(jié)來(lái)調(diào)節(jié)阻抗匹配。② TD-LTE高隔離度寬帶雙極化介質(zhì)諧振器天線。通過(guò)激勵(lì)介質(zhì)諧振器的雙模模式,實(shí)現(xiàn)了寬帶的功能;采用探針—口徑耦合混合饋電的方式,實(shí)現(xiàn)了高隔離度的效果;通過(guò)在探針端加入一塊貼片和口徑耦合端加入了雙節(jié)阻抗變換器的方法實(shí)現(xiàn)了阻抗匹配。(2)設(shè)計(jì)了一款三頻帶濾波器。利用缺陷結(jié)構(gòu)階躍阻抗諧振器來(lái)設(shè)計(jì)第一頻帶和第二頻帶的帶通濾波器,利用加載短路支節(jié)階梯阻抗線設(shè)計(jì)第三頻帶的帶通濾波器;通過(guò)用耦合線饋電的方式將三個(gè)帶通濾波器組合起來(lái),從而實(shí)現(xiàn)了三頻帶帶通濾波器的效果。加工測(cè)試結(jié)果表明,該濾波器的通頻帶為1880～1900MHz、2300～2390和2555～2655MHz,在這三個(gè)頻帶內(nèi),回波損耗分別大于15dB,12dB和10dB,中心頻率處的插入損耗分別為1.37dB、2.5dB和2.8dB,基本滿足設(shè)計(jì)要求。(3)選用安華高公司的ATF54143晶體管設(shè)計(jì)了一款寬帶低噪聲放大器。在第一級(jí)低噪放的輸入端采用兩節(jié)阻抗變換器,通過(guò)控制Q值,實(shí)現(xiàn)了寬帶、低噪聲效果;在第一級(jí)的輸出端設(shè)計(jì)了一個(gè)低通濾波,用于濾出高次諧波。第二級(jí)低噪放的輸入輸出端都作共軛匹配,實(shí)現(xiàn)高增益,并在輸出端設(shè)計(jì)低通濾波匹配,從而將高次諧波濾出。最后,利用50Q微帶線將兩級(jí)低噪放級(jí)聯(lián)起來(lái)。加工測(cè)試結(jié)果表明,該放大器性能良好,通帶范圍為2300～2655MHz,在通帶內(nèi),輸入端的回波損耗都在10dB以上,增益大于22dB,且曲線較平坦,噪聲系數(shù)小于1dB,實(shí)現(xiàn)了寬頻帶特性和低噪聲特性。
[Abstract]:With the rapid development of mobile communication technology, the standard of the fourth generation mobile communication system (TD-LTE) with independent intellectual property (broadband access and distributed network system) proposed by China has successfully entered the 4G candidate standard.TD-LTE of the International Telecommunication Union (ITU). An important technology is the introduction of MIMO technology, its capacity to the whole system and its capacity. The transmission rate has a great influence on the.TD-LTE wireless receiver as an important part of the mobile system. It plays an important role in the communication quality of the whole communication system. Therefore, the working band of the RF front-end device used in the TD-LTE receiving system is roughly divided into three frequency bands with the theoretical significance and the practical value.TD-LTE. If 1880 ~ 1900MHz, 2300 ~ 2390MHz and 2555 ~ 2655MHz. merge 2300 ~ 2390MHz with 2555 to 2655MHz frequency bands, TD-LTE can also be considered as a dual frequency band system composed of high frequency section of 2300 to 2655MHz and low frequency section of 1880 to 1900MHz. Because of the wide bandwidth of the high frequency band, it can also be called the RF front of the broadband system.TD-LTE receiver. The main components include: antenna, filter and low noise amplifier. Therefore, this paper focuses on the RF front-end devices of TD-LTE, and designs a MIMO dual polarization antenna, three frequency band filter and low noise amplifier used in TD-LTE. The main work and fruit of this paper can be summarized as: (1) the two TD-LTE medium resonances are designed. Because the dielectric resonator has the advantages of small size, stable performance, high Q value and convenient feeding, this paper designed the dielectric resonator antenna structure. The two antennas designed are: (1) TD-LTE dual frequency dual polarization dielectric resonator antenna. In order to realize the dual frequency working characteristics, the dielectric resonator is excited by Dan Momo. By combining it with microstrip antenna, the wideband effect of high frequency part is realized. The "H" shaped gap coupling is used and the resonance is resonant in the low frequency part, and the low frequency performance is realized. The impedance matching is adjusted by the 1/4 wavelength impedance converter and the open branch. 2. TD-LTE high isolation broadband dual polarization dielectric resonator. The antenna. By stimulating the dual mode mode of the dielectric resonator, the function of the broadband is realized; the effect of high isolation is realized by using the probe aperture coupling mixed feed mode. The impedance matching is realized by adding a patch and aperture coupling at the probe end to the dual impedance converter. (2) a three band is designed. The filter. The band pass filter of the first and second band is designed by the step impedance resonator of the defective structure, and the band pass filter of the third band is designed by loading short circuit staircase impedance line. The effect of the three band bandpass filter is realized by combining the three bandpass filters with the coupling line feed. The processing test results show that the pass band of the filter is 1880 ~ 1900MHz, 2300~2390 and 2555 ~ 2655MHz. In these three frequency bands, the return loss is greater than 15dB, 12dB and 10dB respectively. The insertion loss at the center frequency is 1.37dB, 2.5dB and 2.8dB, respectively. (3) the ATF54143 transistor of Annwa high company is designed. A broadband low noise amplifier. Two impedance converters are used at the input terminal of the first stage low noise discharge. By controlling the Q value, the broadband and low noise effect is realized. A low pass filter is designed at the first stage of the output terminal to filter out the high harmonic. The input and output end of the second stage low noise amplifier is matched to achieve high gain and be lost. At the end, the low pass filter matching is designed to filter out the high harmonic. Finally, the two stage low noise discharge is cascaded with the 50Q microstrip line. The results show that the amplifier has good performance and the pass band range is 2300 ~ 2655MHz. In the passband, the return loss of the input end is above 10dB, the gain is more than 22dB, and the curve is flat and the noise coefficient is relatively flat. Less than 1dB, the wideband and low noise characteristics are realized.

【學(xué)位授予單位】：大連海事大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN828.6

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相關(guān)期刊論文 前1條

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本文編號(hào)：1856690