發(fā)布時(shí)間：2018-10-09 16:41

【摘要】：p-i-n二極管相對(duì)于p-n結(jié)二極管增加了一個(gè)本征區(qū)(又稱(chēng)為基區(qū)),這使它更廣泛的應(yīng)用于整流、限幅、射頻、光電探測(cè)器等電力電子、光電子領(lǐng)域,基區(qū)的變化可以影響二極管的性能。使用MATLAB模擬了不同組分的In(Al)xGa(1-x)N材料的勢(shì)壘注入渡越時(shí)間(BARITT)二極管的特性,主要分析電流-電壓關(guān)系、單位面積電導(dǎo)-電壓關(guān)系、低場(chǎng)區(qū)與基區(qū)的分界點(diǎn)-電壓的關(guān)系;對(duì)比了兩種材料組份不同時(shí),BARITT二極管的負(fù)阻特性以及電導(dǎo)、電納與頻率的關(guān)系。利用PECVD技術(shù)研制了p +型納米晶硅/n-型單晶硅/n+型納米晶硅((p+)nc-Si/(n-)c-Si/(n+)nc-Si)快恢復(fù)二極管;進(jìn)一步地,在它的陰極結(jié)基區(qū)一側(cè)嵌入(p+)nc-SiC埋層形成控制背面空穴注入(CIBH)結(jié)構(gòu)。對(duì)比了有、無(wú)(p+)nc-SiC埋層的二極管的電容-電壓關(guān)系、電流-電壓曲線(xiàn)、反向恢復(fù)波形,討論了(p+)nc-SiC在二極管的動(dòng)態(tài)和靜態(tài)過(guò)程中起的重要作用。結(jié)果表明,含(p+)nc-SiC埋層的二極管的抗雪崩耐性、反向恢復(fù)性能得到改善。
[Abstract]:Compared with p-n junction diodes, p-i-n diodes have added an intrinsic region (also known as base region), which makes it more widely used in power electronics, optoelectronics, such as rectifier, limiting, RF, photodetector, etc. Changes in the base region can affect the performance of the diode. MATLAB is used to simulate the characteristics of barrier injection transition time (BARITT) diodes for In (Al) xGa (1-x) N materials with different components. The relationship between current and voltage, conductance to voltage per unit area, and the relationship between boundary point and voltage in low field and base region are analyzed. The negative resistance characteristics and the relationship between conductance, electrical conductivity and frequency of the two materials are compared. The p-type nanocrystalline silicon / n- type monocrystalline silicon (p) nc-Si/ (n-) c-Si/ (n) nc-Si fast recovery diode has been fabricated by using PECVD technique. Furthermore, a controlled backside hole injection (CIBH) structure has been formed by embedding a (p) nc-SiC buried layer on one side of the cathode junction base region of p-type nanocrystalline silicon / n- type nanocrystalline silicon (p) nc-Si/ (n-) c-Si/ (n) nc-Si. The capacitance-voltage relationship, current-voltage curve and reverse recovery waveform of diodes without (p) nc-SiC buried layer are compared. The important role of (p) nc-SiC in the dynamic and static process of diodes is discussed. The results show that the avalanche resistance and reverse recovery of the diodes with (p) nc-SiC buried layer are improved.
【學(xué)位授予單位】：溫州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN312.4

【參考文獻(xiàn)】

相關(guān)期刊論文 前9條

1 韋文生;張春熹;;p~+ n~- n~+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J];Journal of Semiconductors;2016年06期

2 馮雷;韓軍;邢艷輝;鄧旭光;汪加興;范亞明;張寶順;;高Al組分AlGaN材料優(yōu)化生長(zhǎng)與組分研究[J];光電子.激光;2012年09期

3 劉靜;高勇;;超低漏電流超快恢復(fù)SiGeC功率二極管研究[J];電子學(xué)報(bào);2009年11期

4 張斌;黃新;陳思敏;;快恢復(fù)二極管設(shè)計(jì)原理綜述[J];電力電子;2008年06期

5 王亮;趙永梅;寧瑾;孫國(guó)勝;王雷;劉興坊;趙萬(wàn)順;曾一平;李晉閩;;水平靜電驅(qū)動(dòng)式多晶3C-SiC折疊懸臂梁諧振器微結(jié)構(gòu)(英文)[J];半導(dǎo)體學(xué)報(bào);2008年08期

6 劉靜;高勇;楊媛;王彩琳;;一種新型漸變摻雜理想歐姆接觸SiGeC/Si功率二極管(英文)[J];半導(dǎo)體學(xué)報(bào);2007年03期

7 祁慧,高勇,余寧梅,馬麗,安濤;i基區(qū)漸變摻雜SiGe/Si異質(zhì)結(jié)開(kāi)關(guān)功率二極管的特性模擬[J];功能材料與器件學(xué)報(bào);2003年04期

8 張海濤,張斌;快速軟恢復(fù)二極管的仿真設(shè)計(jì)[J];半導(dǎo)體技術(shù);2002年06期

9 A.Sj lund;李學(xué)顏;;P~+—n—P~+BARITT二極管的小信號(hào)噪聲分析[J];半導(dǎo)體情報(bào);1974年Z1期

相關(guān)碩士學(xué)位論文 前3條

1 彭進(jìn);硅基功率二極管的正向特性[D];溫州大學(xué);2014年

2 李晶;碳基半導(dǎo)體器件的高頻特性[D];溫州大學(xué);2013年

3 萬(wàn)鑫;漸變AlGaN加速層GaN耿氏二極管的研究[D];西安電子科技大學(xué);2013年

，

本文編號(hào)：2260039