硅摻雜雙有源層氧化鋅薄膜晶體管的制備及特性研究
發(fā)布時間：2018-09-19 20:28
【摘要】：隨著信息技術(shù)的高速發(fā)展,對于顯示技術(shù)的要求越來越高,以有源矩陣液晶顯示器(AMLCD)和有源矩陣有機發(fā)光二極管顯示器(AMOLED)為代表的平板顯示技術(shù)得到了迅速發(fā)展,占據(jù)著平板顯示的主流市場。薄膜晶體管(TFT)是AMLCD和AMOLED中關(guān)鍵的開關(guān)和驅(qū)動器件,氧化鋅薄膜晶體管(Zn O-TFT)由于其遷移率高、制備工藝簡單、低溫工藝、可見光透明等優(yōu)點,被認為是最有希望的下一代TFT技術(shù)。但Zn O-TFT的電特性和穩(wěn)定性還有待進一步提高,以應用于要求越來越高的平板顯示技術(shù)中。因此開展Zn O基TFT的摻雜,有源層結(jié)構(gòu)和穩(wěn)定性的研究,對促進Zn O-TFT的發(fā)展和應用具有重要意義。本文用磁控濺射法制備Zn O及摻Si Zn O(SZO)薄膜作為TFT有源層,制備了單層有源層的Zn O-TFT和摻硅氧化鋅薄膜晶體管(SZO-TFT)以及SZO/Zn O雙層有源層結(jié)構(gòu)的TFT器件(SZO/Zn O-TFT),并比較了它們的電特性和穩(wěn)定性,主要的研究工作和結(jié)果包括:(1)研究了基底溫度和硅含量對SZO薄膜的透光性和SZO-TFT電性能的影響。結(jié)果表明:基底溫度在100℃到250℃范圍制備的SZO薄膜在可見光范圍的透過率都大于85%,基底溫度150℃時所制備的SZO-TFT的綜合性能最佳;隨著Zn O薄膜中硅含量的增加,SZO薄膜能隙寬度增加,導致在可見光范圍內(nèi)透光率增加。適當?shù)墓钃饺隯n O薄膜有源層中,可有效抑制SZO-TFT器件的關(guān)態(tài)電流,提高開關(guān)電流比達兩個數(shù)量級,但器件的載流子遷移率和飽和漏電流有所降低。(2)研究了Zn O-TFT,SZO-TFT和SZO/Zn O-TFT的電特性。結(jié)果表明,通過采用SZO/Zn O雙有源層結(jié)構(gòu),可以在不降低Zn O-TFT載流子遷移率的情況下有效提高開關(guān)電流比近兩個數(shù)量級,從而使器件的整體性能得到有效改善。(3)研究了Zn O-TFT,SZO-TFT和SZO/Zn O-TFT在正柵壓和漏電壓應力下的穩(wěn)定性。結(jié)果表明,雙有源層結(jié)構(gòu)的SZO/Zn O-TFT在正柵偏應力和漏偏壓應力下的穩(wěn)定性都得到明顯改善,這來源于SZO/Zn O薄膜界面處電子勢壘的形成和SZO薄膜中氧空位的減小。(4)研究了Zn O-TFT和SZO/Zn O-TFT在空氣中的穩(wěn)定性。實驗結(jié)果表明,相比Zn O-TFT,雙有源層結(jié)構(gòu)的SZO/Zn O-TFT在空氣環(huán)境下的穩(wěn)定性明顯得到改善,這是由于SZO/Zn O-TFT暴露于空氣的SZO薄膜比Zn O薄膜結(jié)構(gòu)更致密,阻止氧和水汽侵蝕底部Zn O溝道層,抑制了背溝道效應所致。
[Abstract]:With the rapid development of information technology, the demand for display technology is becoming higher and higher. The flat panel display technology, represented by active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode display (AMOLED), has been developed rapidly. It dominates the mainstream market for flat panel display. Thin film transistor (TFT) is the key switch and driver in AMLCD and AMOLED. Zinc oxide thin film transistor (Zn O-TFT) is considered to be the most promising next generation TFT technology because of its high mobility, simple fabrication process, low temperature process and transparent visible light. However, the electrical characteristics and stability of Zn O-TFT need to be further improved in order to be used in more and more demanding flat panel display technology. Therefore, it is of great significance to study the doping, active layer structure and stability of Zn O based TFT to promote the development and application of Zn O-TFT. In this paper, Zn O and Si Zn O (SZO) doped thin films were prepared by magnetron sputtering as the active layer of TFT. Monolayer active layer Zn O-TFT, silicon-doped zinc oxide thin film transistor (SZO-TFT) and SZO/Zn O bilayer active layer TFT device (SZO/Zn O-TFT) were fabricated, and their electrical characteristics and stability were compared. The main results are as follows: (1) the effects of substrate temperature and silicon content on the transmittance and SZO-TFT electrical properties of SZO thin films were investigated. The results show that the transmittance of SZO films prepared at the substrate temperature range from 100 鈩，
本文編號：2251250
[Abstract]:With the rapid development of information technology, the demand for display technology is becoming higher and higher. The flat panel display technology, represented by active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode display (AMOLED), has been developed rapidly. It dominates the mainstream market for flat panel display. Thin film transistor (TFT) is the key switch and driver in AMLCD and AMOLED. Zinc oxide thin film transistor (Zn O-TFT) is considered to be the most promising next generation TFT technology because of its high mobility, simple fabrication process, low temperature process and transparent visible light. However, the electrical characteristics and stability of Zn O-TFT need to be further improved in order to be used in more and more demanding flat panel display technology. Therefore, it is of great significance to study the doping, active layer structure and stability of Zn O based TFT to promote the development and application of Zn O-TFT. In this paper, Zn O and Si Zn O (SZO) doped thin films were prepared by magnetron sputtering as the active layer of TFT. Monolayer active layer Zn O-TFT, silicon-doped zinc oxide thin film transistor (SZO-TFT) and SZO/Zn O bilayer active layer TFT device (SZO/Zn O-TFT) were fabricated, and their electrical characteristics and stability were compared. The main results are as follows: (1) the effects of substrate temperature and silicon content on the transmittance and SZO-TFT electrical properties of SZO thin films were investigated. The results show that the transmittance of SZO films prepared at the substrate temperature range from 100 鈩，
本文編號：2251250
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