磷化銦量子點(diǎn)合成的研究進(jìn)展
發(fā)布時(shí)間:2018-04-11 21:45
本文選題:磷化銦 + 量子點(diǎn); 參考:《中國材料進(jìn)展》2017年02期
【摘要】:綜述了磷化銦量子點(diǎn)合成研究的最新進(jìn)展。由于磷化銦量子點(diǎn)材料具有低毒性(不含鉛鎘等重金屬有毒性元素),且具有優(yōu)異的發(fā)光性質(zhì)(如熒光發(fā)光峰在可見至近紅外發(fā)光范圍內(nèi)可調(diào),熒光量子產(chǎn)率高,穩(wěn)定性好),在新型發(fā)光器件、顯示器件、光檢測器件和生物熒光成像中有廣泛的應(yīng)用前景。經(jīng)過近三十年的發(fā)展,磷化銦量子點(diǎn)的合成研究取得了長足的進(jìn)步,其光學(xué)性質(zhì)已經(jīng)可以和Ⅱ-Ⅵ和Ⅳ-Ⅵ族量子點(diǎn)材料的性能參數(shù)相媲美。圍繞如何開發(fā)和優(yōu)化磷化銦量子點(diǎn)的合成策略,提高材料的光學(xué)性能這一主題進(jìn)行介紹,分別從磷化銦量子點(diǎn)的體相成分、表面配體、核殼結(jié)構(gòu)的調(diào)控及優(yōu)化等方面進(jìn)行了闡述。最后對(duì)磷化銦量子點(diǎn)材料的目前合成研究存在的問題和未來趨勢(shì)進(jìn)行展望。
[Abstract]:The latest progress in the synthesis of indium phosphide quantum dots is reviewed.Due to the low toxicity of indium phosphide quantum dots (not containing heavy metals such as lead and cadmium) and their excellent luminescence properties (for example, the luminescence peak is adjustable in the range of visible to near infrared luminescence, the fluorescence quantum yield is high.It has good stability and has a wide application prospect in new luminescent devices, display devices, optical detection devices and bioluminescence imaging.With the development of nearly 30 years, great progress has been made in the synthesis of indium phosphide quantum dots, and their optical properties can be compared with the performance parameters of 鈪,
本文編號(hào):1737795
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