發(fā)布時(shí)間：2019-05-23 16:56

【摘要】：電荷泵型升壓芯片具有高集成度、輔助電路簡(jiǎn)單、低成本、高效率等優(yōu)點(diǎn),在電子產(chǎn)品設(shè)計(jì)中具有重要的應(yīng)用前景。論文在介紹升壓電荷泵的基本原理與發(fā)展、綜述國(guó)內(nèi)外研究現(xiàn)狀的基礎(chǔ)上,針對(duì)傳統(tǒng)電荷泵的缺點(diǎn),改進(jìn)設(shè)計(jì)了三種性能較高的電荷泵升壓電路。論文首先提出了電路設(shè)計(jì)的功能要求及設(shè)計(jì)指標(biāo),據(jù)此完成電路的總體設(shè)計(jì),圍繞功能性與設(shè)計(jì)指標(biāo),對(duì)各模塊電路進(jìn)行細(xì)節(jié)設(shè)計(jì)。通過(guò)Cadence仿真工具對(duì)電荷泵及各自外圍電路進(jìn)行性能仿真、分析,確保電荷泵升壓電路達(dá)到設(shè)計(jì)指標(biāo)。電路采用SMIC 0.18μm工藝進(jìn)行版圖設(shè)計(jì)與驗(yàn)證,通過(guò)后仿進(jìn)一步驗(yàn)證了電路設(shè)計(jì)。仿真結(jié)果表明所設(shè)計(jì)電路功能正常,完全達(dá)到設(shè)計(jì)指標(biāo)。電荷泵電路具有電壓增益高、效率高、功耗低、紋波電壓小、負(fù)載能力強(qiáng)等優(yōu)點(diǎn),研究結(jié)果具有較強(qiáng)理論意義和實(shí)用價(jià)值。論文中主要工作有:(1)設(shè)計(jì)了一種采用柵極動(dòng)態(tài)控制、襯底偏置技術(shù)的Dickson結(jié)構(gòu)電荷泵電路;(2)設(shè)計(jì)了一種采用柵極動(dòng)態(tài)控制、柵極動(dòng)態(tài)偏置技術(shù)的交叉耦合電荷泵電路;(3)基于改進(jìn)的柵極電位動(dòng)態(tài)控制、柵極動(dòng)態(tài)控制方法設(shè)計(jì)了一種交叉耦合結(jié)構(gòu)的電荷泵電路;(4)圍繞所設(shè)計(jì)的電荷泵電路,設(shè)計(jì)了PFM調(diào)制開(kāi)關(guān)電容電荷泵穩(wěn)壓電路系統(tǒng),系統(tǒng)包括電荷泵、壓控振蕩器(VCO)、非交疊時(shí)鐘產(chǎn)生電路、比較器、帶隙基準(zhǔn)等電路模塊;電荷泵升壓電路的指標(biāo)如下:工作電壓:0.9 2.4V;電壓增益:4(4級(jí));電路功耗:1.5m W;紋波電壓:±10mV;轉(zhuǎn)換效率:65%;負(fù)載能力:100μA;時(shí)鐘頻率:20MHz;
[Abstract]:Charge pump boost chip has the advantages of high integration, simple auxiliary circuit, low cost and high efficiency, and has an important application prospect in electronic product design. In this paper, the basic principle and development of boost charge pump are introduced, and the research status at home and abroad is reviewed. aiming at the shortcomings of traditional charge pump, three kinds of charge pump boost circuits with high performance are improved and designed in this paper. Firstly, the functional requirements and design indexes of the circuit design are put forward, according to which the overall design of the circuit is completed, and the detailed design of each module circuit is carried out around the function and design index. The performance of charge pump and its peripheral circuits are simulated and analyzed by Cadence simulation tool to ensure that the voltage boost circuit of charge pump meets the design index. The circuit is designed and verified by SMIC 0.18 渭 m process, and the circuit design is further verified by imitation. The simulation results show that the designed circuit has normal function and fully meets the design index. Charge pump circuit has the advantages of high voltage gain, high efficiency, low power consumption, low ripple voltage, strong load capacity and so on. The research results have strong theoretical significance and practical value. The main work of this paper is as follows: (1) A Dickson charge pump circuit with gate dynamic control and substrate bias technology is designed. (2) A cross-coupled charge pump circuit based on gate dynamic control and gate dynamic bias technology is designed. (3) based on the improved dynamic control of gate potential, a charge pump circuit with cross-coupling structure is designed. (4) based on the designed charge pump circuit, the voltage stabilizing circuit system of PFM modulation switched capacitor charge pump is designed, which includes charge pump, voltage controlled oscillator (VCO), non-overlapping clock generation circuit, comparator, band gap reference and other circuit modules. The indexes of charge pump boost circuit are as follows: operating voltage: 0.9 鈮，

本文編號(hào)：2484060