一種新型GaN功率開關(guān)器件（GIT）中子輻照效應(yīng)研究
發(fā)布時間：2019-05-07 21:23
【摘要】：GaN功率開關(guān)器件因為其耐高溫、耐高壓、高功率容量和高頻的特點(diǎn)在未來商用和軍用市場有著巨大的應(yīng)用潛力。增強(qiáng)型技術(shù)是當(dāng)前研究GaN功率開關(guān)器件的熱點(diǎn)內(nèi)容之一。然而,當(dāng)前國內(nèi)外針對GaN增強(qiáng)型HEMT開展的輻照效應(yīng)研究較少。根據(jù)器件工作機(jī)理分析,位移損傷是可能導(dǎo)致GaN增強(qiáng)型HEMT性能退化的主要因素。因此,開展增強(qiáng)型GaN功率開關(guān)器件中子輻照效應(yīng)研究,對于評估GaN基功率開關(guān)器件在強(qiáng)輻射環(huán)境中的可靠應(yīng)用具有重要意義。本文針對當(dāng)前一種新型增強(qiáng)型GaN功率開關(guān)器件——柵注入晶體管(GIT),采用仿真和實驗相結(jié)合的方法對其中子位移損傷效應(yīng)和退化規(guī)律進(jìn)行了研究。首先,利用Gent4計算了不同注量中子輻照下在器件中產(chǎn)生的位移缺陷密度;然后,采用SILVACO軟件模擬了該器件的基本結(jié)構(gòu)和主要特性,并通過在器件模型中嵌入陷阱的方法,分析了位移缺陷對器件性能的影響;最后,在反應(yīng)堆中子環(huán)境下,對樣品器件開展了1MeV中子的輻照實驗,實驗結(jié)果在一定程度上與仿真結(jié)果吻合。論文研究結(jié)果表明,與傳統(tǒng)耗盡型GaN HEMT相比,GIT因為其特殊的結(jié)構(gòu),其位移損傷機(jī)理和中子輻照效應(yīng)均有所不同。研究發(fā)現(xiàn),當(dāng)中子輻照注量達(dá)到1.6×1014cm-2時,器件產(chǎn)生的主要效應(yīng)包括飽和漏電流的下降(其產(chǎn)生的主要原因是器件溝道遷移率的退化)和關(guān)態(tài)漏極漏電流的增加;而當(dāng)中子注量高達(dá)1.5×1015cm-2時,除了出現(xiàn)上述的退化外,器件的閾值電壓還發(fā)生了微弱的負(fù)向漂移。該器件閾值電壓主要同溝道2DEG密度和p型柵的有效摻雜濃度有關(guān),實驗結(jié)果產(chǎn)生了負(fù)向漂移表明中子輻照產(chǎn)生的多數(shù)載流子去除效應(yīng)對p型柵的影響占主導(dǎo)作用;此外,通過實驗發(fā)現(xiàn)器件的關(guān)態(tài)柵漏電流始終沒有發(fā)生明顯變化。本文研究工作為GaN功率開關(guān)器件位移損傷效應(yīng)研究和加固技術(shù)研究提供參考。
[Abstract]:Because of its high temperature resistance, high voltage resistance, high power capacity and high frequency, GaN power switching devices have great potential applications in commercial and military markets in the future. Enhanced technology is one of the hot topics in the research of GaN power switching devices. However, there are few studies on the radiation effects of GaN-enhanced HEMT at home and abroad. According to the analysis of the working mechanism of the device, the displacement damage is the main factor that may lead to the degradation of the performance of GaN-enhanced HEMT. Therefore, the study of neutron irradiation effect of enhanced GaN power switching devices is of great significance for evaluating the reliable application of GaN-based power switching devices in strong radiation environments. In this paper, a new type of enhanced GaN power switching device, gate injection transistor (GIT), is used to study the neutron displacement damage effect and degradation rule by means of simulation and experiment. Firstly, the density of displacement defects produced by neutron irradiation with different flux is calculated by Gent4. Then, the basic structure and main characteristics of the device are simulated by SILVACO software, and the effect of displacement defect on the performance of the device is analyzed by embedding trap in the device model. Finally, the 1MeV neutron irradiation experiments were carried out in the reactor neutron environment, and the experimental results were in agreement with the simulation results to a certain extent. The results show that the displacement damage mechanism and neutron irradiation effect of GIT are different because of its special structure compared with the traditional depletion type GaN HEMT. It is found that when the neutron irradiation flux reaches 1.6 脳 1014 cm ~ (- 2), the main effects of the device include the decrease of the saturation leakage current (the main reason is the degradation of the channel mobility) and the increase of the off-state drain current. When the neutron flux is up to 1.5 脳 1015cm ~ (- 2), the threshold voltage of the device also has a weak negative drift in addition to the above degradation. The threshold voltage of the device is mainly related to the channel 2DEG density and the effective doping concentration of p-gate. The negative drift results show that the effect of neutron irradiation on p-type gate is dominated by the majority carrier removal effect. In addition, it is found by experiments that the gate leakage current of the device has not changed significantly. The research work in this paper provides a reference for the study of displacement damage effect and reinforcement technology of GaN power switch devices.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN32;TN386
本文編號：2471393
[Abstract]:Because of its high temperature resistance, high voltage resistance, high power capacity and high frequency, GaN power switching devices have great potential applications in commercial and military markets in the future. Enhanced technology is one of the hot topics in the research of GaN power switching devices. However, there are few studies on the radiation effects of GaN-enhanced HEMT at home and abroad. According to the analysis of the working mechanism of the device, the displacement damage is the main factor that may lead to the degradation of the performance of GaN-enhanced HEMT. Therefore, the study of neutron irradiation effect of enhanced GaN power switching devices is of great significance for evaluating the reliable application of GaN-based power switching devices in strong radiation environments. In this paper, a new type of enhanced GaN power switching device, gate injection transistor (GIT), is used to study the neutron displacement damage effect and degradation rule by means of simulation and experiment. Firstly, the density of displacement defects produced by neutron irradiation with different flux is calculated by Gent4. Then, the basic structure and main characteristics of the device are simulated by SILVACO software, and the effect of displacement defect on the performance of the device is analyzed by embedding trap in the device model. Finally, the 1MeV neutron irradiation experiments were carried out in the reactor neutron environment, and the experimental results were in agreement with the simulation results to a certain extent. The results show that the displacement damage mechanism and neutron irradiation effect of GIT are different because of its special structure compared with the traditional depletion type GaN HEMT. It is found that when the neutron irradiation flux reaches 1.6 脳 1014 cm ~ (- 2), the main effects of the device include the decrease of the saturation leakage current (the main reason is the degradation of the channel mobility) and the increase of the off-state drain current. When the neutron flux is up to 1.5 脳 1015cm ~ (- 2), the threshold voltage of the device also has a weak negative drift in addition to the above degradation. The threshold voltage of the device is mainly related to the channel 2DEG density and the effective doping concentration of p-gate. The negative drift results show that the effect of neutron irradiation on p-type gate is dominated by the majority carrier removal effect. In addition, it is found by experiments that the gate leakage current of the device has not changed significantly. The research work in this paper provides a reference for the study of displacement damage effect and reinforcement technology of GaN power switch devices.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN32;TN386
【參考文獻(xiàn)】
相關(guān)期刊論文 前2條
1 錢照明;張軍明;盛況;;電力電子器件及其應(yīng)用的現(xiàn)狀和發(fā)展[J];中國電機(jī)工程學(xué)報;2014年29期
2 張明蘭;楊瑞霞;王曉亮;胡國新;高志;;高擊穿電壓AlGaN/GaN HEMT電力開關(guān)器件研究進(jìn)展[J];半導(dǎo)體技術(shù);2010年05期
，本文編號：2471393
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