帶過溫保護(hù)的高精度帶隙基準(zhǔn)源的研究與設(shè)計(jì)
發(fā)布時(shí)間：2018-10-08 17:12
【摘要】：模擬集成電路和數(shù)模集成電路內(nèi)部系統(tǒng)很多模塊都需要參考電壓和穩(wěn)定的電流偏置,因此基準(zhǔn)源電路廣泛存在于這類系統(tǒng)內(nèi)�；鶞�(zhǔn)源的設(shè)計(jì)指標(biāo)包括溫度系數(shù)要小,電源抑制比要高,與工藝角等參數(shù)的相關(guān)性小等。性能優(yōu)異的基準(zhǔn)源對于系統(tǒng)很多模塊的功能實(shí)現(xiàn)具有重要的意義�；鶞�(zhǔn)源應(yīng)用于許多類型的集成電路之中,比如DC-DC、AC-DC、以及A/D或D/A。這些產(chǎn)品的集成度都很高,工作頻率也很高；因此要求基準(zhǔn)源在保證精度的情況下,也要具有良好的電源抑制比能力、抗噪聲能力。由于帶隙基準(zhǔn)源具有高電源抑制比(PSRR)和低溫度系數(shù)等優(yōu)良的特點(diǎn),故其是目前各種基準(zhǔn)源結(jié)構(gòu)中運(yùn)用最廣泛的拓?fù)浣Y(jié)構(gòu)。由于系統(tǒng)的溫度會隨著負(fù)載的變化而變化,當(dāng)系統(tǒng)溫度過高時(shí),系統(tǒng)要關(guān)閉以免系統(tǒng)溫度過高。當(dāng)系統(tǒng)溫度高于設(shè)定的溫度值時(shí),會觸發(fā)過溫保護(hù)功能,同時(shí)會引發(fā)電阻分壓的比例值發(fā)生變化,從而導(dǎo)致過溫保護(hù)電路恢復(fù)正常的溫度值與原來的溫度值不同。在對比了多種基準(zhǔn)源結(jié)構(gòu)和溫度補(bǔ)償方案的基本上,本文在器件選擇上和電路架構(gòu)選擇進(jìn)行了研究。本文基于OKI 0.5μm BCD工藝,設(shè)計(jì)了一種帶曲率補(bǔ)償?shù)牡蜏仄瘞痘鶞?zhǔn)源,采用Brokaw帶隙基準(zhǔn)核心結(jié)構(gòu),引入一個(gè)高階效應(yīng)的電流對基準(zhǔn)進(jìn)行補(bǔ)償；結(jié)合基準(zhǔn)核心電路產(chǎn)生的無溫度系數(shù)電壓,利用簡單的電路實(shí)現(xiàn)基準(zhǔn)電流源的產(chǎn)生。運(yùn)用Hspice對本文設(shè)計(jì)的電路進(jìn)行仿真和驗(yàn)證,仿真結(jié)果表明：輸出基準(zhǔn)電壓的溫度系數(shù)僅為3.9ppm/℃,基準(zhǔn)電流在-40℃～150℃溫度范圍內(nèi)波動0.2%。在電源電壓3V-6 V波動范圍內(nèi),輸出基準(zhǔn)電壓波動為562gV,輸出基準(zhǔn)電流波動為2.2nA,基準(zhǔn)源在低頗下(10kHz以下)PSRR可達(dá)-76dB。從仿真數(shù)據(jù)中可以得到,本文設(shè)計(jì)的基準(zhǔn)源的溫性能得到了明顯的提升,低頻時(shí)的電源抑制比也很好,同時(shí)本文的結(jié)構(gòu)也較簡單,仿真時(shí)得到的建立時(shí)間也較短等特點(diǎn)。
[Abstract]:Many modules of analog and digital analog integrated circuits require reference voltage and stable current bias, so reference source circuits are widely used in these systems. The design indexes of the reference source include low temperature coefficient, high power supply rejection ratio and low correlation with parameters such as process angle and so on. The reference source with excellent performance is of great significance to the functional realization of many modules of the system. Reference sources are used in many types of integrated circuits, such as DC-DC,AC-DC, and A / R D or D / A. The integration of these products is very high and the working frequency is very high. Therefore, the reference source should have good power supply rejection ratio and anti-noise ability under the condition of ensuring accuracy. Bandgap reference is the most widely used topology in all kinds of reference sources because of its excellent characteristics such as high power rejection ratio (PSRR) and low temperature coefficient. Since the temperature of the system varies with the load, when the temperature of the system is too high, the system should be closed to avoid excessive temperature. When the temperature of the system is higher than the set temperature value, the function of over-temperature protection will be triggered, and the proportional value of resistance partial voltage will change at the same time, resulting in the recovery of the normal temperature value of the over-temperature protection circuit is different from the original temperature value. In comparison with various reference source structures and temperature compensation schemes, the device selection and circuit architecture selection are studied in this paper. Based on the OKI 0.5 渭 m BCD process, a low-temperature drift band gap reference source with curvature compensation is designed in this paper. The core structure of the Brokaw bandgap reference is adopted, and a high-order effect current is introduced to compensate the reference. Combined with the temperature-free voltage generated by the core circuit, a simple circuit is used to realize the generation of the reference current source. The circuit designed in this paper is simulated and verified by Hspice. The simulation results show that the temperature coefficient of the output reference voltage is only 3.9ppm/ 鈩，
本文編號：2257597
[Abstract]:Many modules of analog and digital analog integrated circuits require reference voltage and stable current bias, so reference source circuits are widely used in these systems. The design indexes of the reference source include low temperature coefficient, high power supply rejection ratio and low correlation with parameters such as process angle and so on. The reference source with excellent performance is of great significance to the functional realization of many modules of the system. Reference sources are used in many types of integrated circuits, such as DC-DC,AC-DC, and A / R D or D / A. The integration of these products is very high and the working frequency is very high. Therefore, the reference source should have good power supply rejection ratio and anti-noise ability under the condition of ensuring accuracy. Bandgap reference is the most widely used topology in all kinds of reference sources because of its excellent characteristics such as high power rejection ratio (PSRR) and low temperature coefficient. Since the temperature of the system varies with the load, when the temperature of the system is too high, the system should be closed to avoid excessive temperature. When the temperature of the system is higher than the set temperature value, the function of over-temperature protection will be triggered, and the proportional value of resistance partial voltage will change at the same time, resulting in the recovery of the normal temperature value of the over-temperature protection circuit is different from the original temperature value. In comparison with various reference source structures and temperature compensation schemes, the device selection and circuit architecture selection are studied in this paper. Based on the OKI 0.5 渭 m BCD process, a low-temperature drift band gap reference source with curvature compensation is designed in this paper. The core structure of the Brokaw bandgap reference is adopted, and a high-order effect current is introduced to compensate the reference. Combined with the temperature-free voltage generated by the core circuit, a simple circuit is used to realize the generation of the reference current source. The circuit designed in this paper is simulated and verified by Hspice. The simulation results show that the temperature coefficient of the output reference voltage is only 3.9ppm/ 鈩，
本文編號：2257597
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