一種基于絕緣體上Ge的碰撞電離晶體管
發(fā)布時間：2018-09-18 07:52
【摘要】：碰撞電離晶體管(IMOS)在高速、低功耗領(lǐng)域具有很好的應(yīng)用前景。以優(yōu)化傳統(tǒng)IMOS的工作電壓為目的,介紹了一種基于絕緣體上Ge的碰撞電離晶體管(GOI IMOS),利用Synopsys公司的ISE_TCAD對GOI IMOS的性能進行仿真分析與驗證。結(jié)果表明,GOI IMOS相比于傳統(tǒng)的絕緣體上Si的碰撞電離晶體管(SOI IMOS)可在更低的源漏偏壓下工作,同時該器件能夠?qū)崿F(xiàn)大的開態(tài)電流與陡峭的亞閾值擺幅;另外,GOI IMOS的源漏偏壓和柵長均對該器件閾值電壓有較大的影響,p型GOI IMOS閾值電壓的絕對值隨著源漏電壓和柵長的增大而減小。以上工作可為IMOS的設(shè)計、仿真、制備提供一定的理論指導。
[Abstract]:Collision ionization transistor (IMOS) has a good prospect in high speed and low power consumption. In order to optimize the operating voltage of traditional IMOS, a collision ionization transistor (GOI IMOS),) based on Ge on insulator is introduced. The performance of GOI IMOS is simulated and verified by Synopsys's ISE_TCAD. The results show that the collisional ionization transistor (SOI IMOS) of Si on the insulator can work at a lower source / drain bias voltage than that of the traditional Si on insulator, and the device can realize large on state current and steep subthreshold swing. In addition, both the source and drain bias voltage and gate length of GOI IMOS have great influence on the threshold voltage of the device. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source drain voltage and the gate length. The above work can provide some theoretical guidance for the design, simulation and preparation of IMOS.
【作者單位】： 中國電子科技集團公司第十三研究所;西安科技大學電氣與控制工程學院;
【分類號】：TN32
本文編號：2247260
[Abstract]:Collision ionization transistor (IMOS) has a good prospect in high speed and low power consumption. In order to optimize the operating voltage of traditional IMOS, a collision ionization transistor (GOI IMOS),) based on Ge on insulator is introduced. The performance of GOI IMOS is simulated and verified by Synopsys's ISE_TCAD. The results show that the collisional ionization transistor (SOI IMOS) of Si on the insulator can work at a lower source / drain bias voltage than that of the traditional Si on insulator, and the device can realize large on state current and steep subthreshold swing. In addition, both the source and drain bias voltage and gate length of GOI IMOS have great influence on the threshold voltage of the device. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source drain voltage and the gate length. The above work can provide some theoretical guidance for the design, simulation and preparation of IMOS.
【作者單位】： 中國電子科技集團公司第十三研究所;西安科技大學電氣與控制工程學院;
【分類號】：TN32
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