發(fā)布時(shí)間：2018-09-06 18:01

【摘要】：在高功率微波領(lǐng)域的研究進(jìn)程中,增大輸出功率和提高轉(zhuǎn)換效率一直是該領(lǐng)域的重要目標(biāo)。而渡越時(shí)間振蕩器作為高功率微波領(lǐng)域的典型器件之一,具有腔體構(gòu)造簡(jiǎn)單,輸出功率高且工作頻點(diǎn)單一的優(yōu)點(diǎn),從而受到科研人員關(guān)注。目前,大多數(shù)渡越時(shí)間振蕩器通常使用柵網(wǎng)結(jié)構(gòu)或圓柱腔結(jié)構(gòu),同軸結(jié)構(gòu)的研究則相對(duì)較少,而同軸結(jié)構(gòu)可增大腔體結(jié)構(gòu)的空間電荷限制電流,從而增大整管的輸出功率�；�于此,為了提高輸出功率和器件效率,本文設(shè)計(jì)了一種基于渡越時(shí)間效應(yīng)的,工作于S波段的同軸擴(kuò)展互作用腔振蕩器,并對(duì)該器件進(jìn)行了詳細(xì)研究,具體研究?jī)?nèi)容如下:1.分析了在同軸漂移管中的空間電荷限制流,結(jié)果表明同軸結(jié)構(gòu)有利于提高器件的效率。同時(shí)分析了在同軸結(jié)構(gòu)中保證電子束穩(wěn)定傳輸?shù)呐R界磁場(chǎng)取值。接著分析了基于小信號(hào)前提下,單腔結(jié)構(gòu)與兩腔結(jié)構(gòu)中電子注與?模場(chǎng)的作用情況,推導(dǎo)了電子在離開(kāi)間隙時(shí)的速度及動(dòng)能,最后得到了電子負(fù)載電導(dǎo)和效率的表達(dá)式;2.通過(guò)理論分析了S波段同軸相對(duì)論擴(kuò)展互作用腔振蕩器的主要設(shè)計(jì)參量,同時(shí)結(jié)合實(shí)際工藝等方面給出了各參量的設(shè)計(jì)標(biāo)準(zhǔn);3.利用軟件對(duì)S波段同軸相對(duì)論擴(kuò)展互作用腔振蕩器的高頻特性進(jìn)行了研究,主要分析了調(diào)制腔中0模場(chǎng)和?模場(chǎng)以及輸出腔中01TM模場(chǎng),同時(shí)分別研究了多個(gè)設(shè)計(jì)參量對(duì)腔體高頻特性的影響,為S波段同軸相對(duì)論擴(kuò)展互作用腔振蕩器的設(shè)計(jì)提供依據(jù);4.通過(guò)PIC粒子模擬分別研究了電子束在調(diào)制腔中與高頻場(chǎng)的作用過(guò)程以及電子束在輸出腔中的微波提取過(guò)程,最后對(duì)整腔結(jié)構(gòu)進(jìn)行了PIC粒子模擬。粒子模擬結(jié)果表明,在引導(dǎo)磁場(chǎng)1T,電子束電壓900kV電流9kA的條件下,整管的輸出微波功率為2GW,微波頻率為2.408GHz,效率為24.7%。通過(guò)本文的研究,S波段同軸相對(duì)論擴(kuò)展互作用腔振蕩器表現(xiàn)出了良好的輸出性能,表明同軸結(jié)構(gòu)在高功率微波源方面的應(yīng)用是可行的,同時(shí)本文的研究也為進(jìn)一步探究同軸結(jié)構(gòu)的高功率微波器件奠定了基礎(chǔ)。
[Abstract]:In the research process of high power microwave field, increasing output power and improving conversion efficiency have been the important goals in this field. As one of the typical devices in the field of high power microwave, the transit time oscillator has the advantages of simple structure, high output power and single operating frequency. At present, most transit time oscillators usually use grid structure or cylindrical cavity structure, but the coaxial structure is less studied, and the coaxial structure can increase the space charge limiting current of the cavity structure, thus increasing the output power of the whole transistor. Based on this, in order to improve the output power and device efficiency, a coaxial extended interaction cavity oscillator based on transition time effect is designed and studied in detail. The research contents are as follows: 1. The space charge limiting current in the coaxial drift tube is analyzed. The results show that the coaxial structure is helpful to improve the efficiency of the device. At the same time, the critical magnetic field values to ensure the stable transmission of electron beam in coaxial structure are analyzed. Then we analyze the electron beam and electron beam in single cavity structure and two cavity structure based on small signal. The velocity and kinetic energy of the electron when leaving the gap are derived. Finally, the expressions of conductivity and efficiency of the electron load are obtained. The main design parameters of S-band coaxial relativistic extended interaction cavity oscillator are analyzed theoretically. The high frequency characteristics of S-band coaxial relativistic extended interaction cavity oscillator are studied by software. The influence of several design parameters on the high frequency characteristics of the cavity is studied, which provides a basis for the design of the S-band coaxial relativistic extended interaction cavity oscillator. The interaction between the electron beam and the high frequency field in the modulation cavity and the microwave extraction process of the electron beam in the output cavity were studied by PIC particle simulation. Finally, the PIC particle simulation of the whole cavity structure was carried out. The particle simulation results show that the output microwave power is 2GW, the microwave frequency is 2.408GHz and the efficiency is 24.7 under the conditions of guided magnetic field 1 T and electron beam voltage 900kV current 9kA. The study of S-band coaxial relativistic extended interaction cavity oscillator shows good output performance, which shows that the application of coaxial structure in high power microwave source is feasible. At the same time, the research in this paper also lays a foundation for further exploring the coaxial structure of high power microwave devices.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN752

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