接觸型局域SP光刻直寫頭的懸持結(jié)構(gòu)設(shè)計(jì)及仿真分析
發(fā)布時(shí)間：2019-05-21 15:14
【摘要】：光刻技術(shù)在半導(dǎo)體工業(yè)中扮演著重要的角色,但衍射極限的存在限制了傳統(tǒng)光學(xué)光刻在光刻分辨率上的進(jìn)一步提高。由近場(chǎng)光學(xué)發(fā)展而來的近場(chǎng)光刻為突破衍射極限提供了新的思路,但光通率不高導(dǎo)致其光刻質(zhì)量不佳。基于表面等離子體激元的近場(chǎng)光刻具有透射增強(qiáng)效應(yīng),使得光刻的分辨率和成像質(zhì)量得到顯著提高。等離子體直寫光刻作為表面等離子體光刻技術(shù)的一種,光刻時(shí)無需掩模,能夠?qū)崿F(xiàn)任意圖形的刻寫,且光刻系統(tǒng)簡(jiǎn)單,成本較低,是一種理想的納米光刻技術(shù)。掃描探針光刻作為一種重要的直寫光刻方式,常采用懸臂梁探針結(jié)構(gòu)。但懸臂梁受力容易彎曲變形,造成探針的位置精度誤差。本文設(shè)計(jì)了一種具有雙固支彈性臂的圓形彈簧作為掃描探針的懸持結(jié)構(gòu),提高光刻時(shí)探針的位置精度。彈性臂設(shè)計(jì)為圓弧形,彈性臂數(shù)為四個(gè)。通過調(diào)節(jié)彈性臂的有效臂長、寬度和厚度,實(shí)現(xiàn)較合理的彈簧剛度。通過理論分析了懸臂梁探針結(jié)構(gòu)在接觸模式和掃描模式下的探針位置精度,并利用有限元分析軟件對(duì)兩種探針懸持結(jié)構(gòu)在兩種工作模式下的位置精度進(jìn)行了仿真對(duì)比。在接觸模式下,懸臂梁探針產(chǎn)生水平位移,而圓形彈簧探針不會(huì)產(chǎn)生水平位移,位置精度得到較大提高;在掃描模式下,懸臂梁探針結(jié)構(gòu)沿著不同方向掃描時(shí),探針產(chǎn)生不同的水平位移;圓形彈簧探針結(jié)構(gòu)的探針?biāo)轿灰撇浑S掃描方向的變化而變化,位置精度得到提高。對(duì)圓形彈簧應(yīng)用于接觸型局域表面等離子體直寫光刻進(jìn)行了動(dòng)態(tài)仿真,通過優(yōu)化結(jié)構(gòu)參數(shù),仿真結(jié)果達(dá)到預(yù)期效果。光刻時(shí),圓形彈簧變形產(chǎn)生的彈性力能夠保證探針與光刻膠的穩(wěn)定接觸;在接觸模式下,圓形彈簧保持探針上升姿態(tài)垂直,不會(huì)發(fā)生偏轉(zhuǎn);在掃描模式下,圓形彈簧保持探針偏角角度恒定不變,探針刻寫姿態(tài)穩(wěn)定;在相同的位移載荷和掃描速度下,沿不同方向掃描時(shí)圓形彈簧使探針具有相同的繞xy平面的偏轉(zhuǎn)角度。利用圓形彈簧的自適應(yīng)性,在不超過探針允許傾斜角度的最大位移載荷下,能夠調(diào)整1.5′的相對(duì)傾斜角度,并且在傾斜的光刻膠表面光刻時(shí),圓形彈簧保證探針適應(yīng)光刻膠表面的位置變化。完成接觸型局域表面等離子體直寫光刻系統(tǒng)的實(shí)驗(yàn)平臺(tái)設(shè)計(jì),并對(duì)關(guān)鍵部件進(jìn)行選型和采購,確定掃描過程中探針刻寫姿態(tài)的檢測(cè)方案。
[Abstract]:The lithography technology plays an important role in the semiconductor industry, but the existence of the diffraction limit limits the further improvement of the conventional optical lithography in the photoetching resolution. The near-field lithography, which is developed from near-field optics, provides a new way to break the diffraction limit, but the light-pass rate is not high, resulting in poor lithographic quality. The near-field lithography based on surface plasmons has a transmission-enhancing effect, so that the resolution of the photolithography and the imaging quality are significantly improved. The plasma direct-writing lithography is used as one of the surface plasma photoetching technology, and can realize the writing of any pattern without a mask during the photoetching, and the photoetching system is simple and the cost is low, and is an ideal nano-photoetching technology. Scanning probe lithography, as an important direct-write lithographic method, is often used as a cantilever beam probe structure. But the force of the cantilever beam is easy to be bent and deformed, and the position precision error of the probe is caused. In this paper, a circular spring with two elastic arms is designed as the suspension structure of the scanning probe, and the position accuracy of the probe is improved. The elastic arm is designed in a circular arc shape, and the number of the elastic arms is four. By adjusting the effective arm length, width and thickness of the elastic arm, the reasonable spring rate is realized. The probe position accuracy of the cantilever beam probe structure under the contact mode and the scanning mode is analyzed by the theory, and the position accuracy of the two kinds of probe suspension structures under two working modes is simulated by using the finite element analysis software. in the contact mode, the cantilever beam probe generates a horizontal displacement, and the circular spring probe does not generate a horizontal displacement, and the position accuracy is greatly improved; in the scanning mode, when the cantilever beam probe structure is scanned in different directions, the probe generates different horizontal displacements; The probe horizontal displacement of the circular spring probe structure does not change with the change of the scanning direction, and the position accuracy is improved. The dynamic simulation of the circular spring applied to the contact type local surface plasma direct-write lithography is carried out, and the expected effect is achieved by the structure parameters. in the photoetching process, the elastic force generated by the deformation of the circular spring can ensure the stable contact of the probe and the photoresist; in the contact mode, the circular spring keeps the probe rising posture to be vertical and does not deflect; in the scanning mode, the circular spring keeps the angle of the probe angle of the probe constant, The probe has a stable writing posture; at the same displacement load and scanning speed, the circular spring makes the probe have the same deflection angle about the xy-plane at the time of scanning in different directions. With the self-adaptability of the circular spring, the relative inclination angle of 1.5% can be adjusted without exceeding the maximum displacement load of the probe allowing the inclination angle, and when the inclined photoresist surface is photoetching, the circular spring ensures that the probe is adapted to the position change of the surface of the photoresist. The design of the experimental platform of the contact type local surface plasma direct writing lithography system is completed, and the key parts are selected and purchased, and the detection scheme of the probe writing posture in the scanning process is determined.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7
，
本文編號(hào)：2482186
[Abstract]:The lithography technology plays an important role in the semiconductor industry, but the existence of the diffraction limit limits the further improvement of the conventional optical lithography in the photoetching resolution. The near-field lithography, which is developed from near-field optics, provides a new way to break the diffraction limit, but the light-pass rate is not high, resulting in poor lithographic quality. The near-field lithography based on surface plasmons has a transmission-enhancing effect, so that the resolution of the photolithography and the imaging quality are significantly improved. The plasma direct-writing lithography is used as one of the surface plasma photoetching technology, and can realize the writing of any pattern without a mask during the photoetching, and the photoetching system is simple and the cost is low, and is an ideal nano-photoetching technology. Scanning probe lithography, as an important direct-write lithographic method, is often used as a cantilever beam probe structure. But the force of the cantilever beam is easy to be bent and deformed, and the position precision error of the probe is caused. In this paper, a circular spring with two elastic arms is designed as the suspension structure of the scanning probe, and the position accuracy of the probe is improved. The elastic arm is designed in a circular arc shape, and the number of the elastic arms is four. By adjusting the effective arm length, width and thickness of the elastic arm, the reasonable spring rate is realized. The probe position accuracy of the cantilever beam probe structure under the contact mode and the scanning mode is analyzed by the theory, and the position accuracy of the two kinds of probe suspension structures under two working modes is simulated by using the finite element analysis software. in the contact mode, the cantilever beam probe generates a horizontal displacement, and the circular spring probe does not generate a horizontal displacement, and the position accuracy is greatly improved; in the scanning mode, when the cantilever beam probe structure is scanned in different directions, the probe generates different horizontal displacements; The probe horizontal displacement of the circular spring probe structure does not change with the change of the scanning direction, and the position accuracy is improved. The dynamic simulation of the circular spring applied to the contact type local surface plasma direct-write lithography is carried out, and the expected effect is achieved by the structure parameters. in the photoetching process, the elastic force generated by the deformation of the circular spring can ensure the stable contact of the probe and the photoresist; in the contact mode, the circular spring keeps the probe rising posture to be vertical and does not deflect; in the scanning mode, the circular spring keeps the angle of the probe angle of the probe constant, The probe has a stable writing posture; at the same displacement load and scanning speed, the circular spring makes the probe have the same deflection angle about the xy-plane at the time of scanning in different directions. With the self-adaptability of the circular spring, the relative inclination angle of 1.5% can be adjusted without exceeding the maximum displacement load of the probe allowing the inclination angle, and when the inclined photoresist surface is photoetching, the circular spring ensures that the probe is adapted to the position change of the surface of the photoresist. The design of the experimental platform of the contact type local surface plasma direct writing lithography system is completed, and the key parts are selected and purchased, and the detection scheme of the probe writing posture in the scanning process is determined.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7
，
本文編號(hào)：2482186
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