發(fā)布時間：2019-05-19 08:08

【摘要】：無線通信產(chǎn)業(yè)的發(fā)展和移動互聯(lián)設(shè)備的增加對無線通信頻段帶寬提出了更高的需求,毫米波頻段十分可觀的資源顯得更有吸引力,通信產(chǎn)業(yè)的發(fā)展同時也促進(jìn)了毫米波器件的研制。InP基HBT器件作為一類毫米波器件擁有線性度好、高增益、高功率密度、高截止頻率、相位噪聲低等優(yōu)點(diǎn),是光纖通信和無線通信應(yīng)用領(lǐng)域的重要高頻電子器件之一。HBT器件原理與BJT基本一致,先前數(shù)類BJT模型仍能夠用于HBT器件的參數(shù)提取,但是此類模型用于參數(shù)提取的準(zhǔn)確性低且適用性有限,模型拓?fù)渚W(wǎng)絡(luò)和器件實際物理結(jié)構(gòu)及相關(guān)寄生效應(yīng)無法嚴(yán)格對應(yīng),因此開發(fā)出針對InP基HBT的準(zhǔn)確模型十分必要。本文首先對HBT的發(fā)展歷程進(jìn)行概述,比較了不同材料系HBT的優(yōu)缺點(diǎn),介紹了HBT器件的工作原理。之后介紹了原本針對BJT進(jìn)行開發(fā)的簡單器件模型EM、GP,以及對HBT進(jìn)行過優(yōu)化的兩類高級模型VBIC和HICUM,重點(diǎn)闡述了專門針對III-V族化合物HBT器件開發(fā)的AgilentHBT模型。文章完成了VBIC、HICUM、AgilentHBT三類模型DC 66GHz的模型提取,并在DC、渡越時間、特征頻率曲線上比較了三類模型的參數(shù)擬合精度,得出相對適用于InP基HBT毫米波亞毫米波段參數(shù)提取的模型。在文章最后介紹了利用AgilentHBT模型對InP基HBT器件進(jìn)行75-110GHz、220-325GHz頻段大信號建模的完整流程,并且在直流、電壓電容關(guān)系、渡越時間、特征頻率和S參數(shù)上進(jìn)行了模型準(zhǔn)確性的驗證。最后在220GHz-325GHz測試數(shù)據(jù)基礎(chǔ)上,對不同因素引發(fā)器件穩(wěn)定性變化過程進(jìn)行了分析。
[Abstract]:With the development of wireless communication industry and the increase of mobile interconnection equipment, the bandwidth of wireless communication band is higher, and the considerable resources of millimeter wave band are more attractive. The development of communication industry has also promoted the development of millimeter wave devices. InP-based HBT devices, as a class of millimeter wave devices, have many advantages, such as good linearity, high gain, high power density, high cutoff frequency, low phase noise and so on. HBT is one of the most important high frequency electronic devices in the field of optical fiber communication and wireless communication applications. The principle of BJT devices is basically the same as that of HBT. The previous BJT models can still be used to extract the parameters of HBT devices. However, this kind of model has low accuracy and limited applicability in parameter extraction, and the actual physical structure and related parasitic effects of the model topology network and devices can not be strictly corresponding, so it is necessary to develop an accurate model for InP-based HBT. In this paper, the development of HBT is summarized, the advantages and disadvantages of different material systems HBT are compared, and the working principle of HBT devices is introduced. Then the simple device model EM,GP, which was originally developed for BJT, and two kinds of advanced models VBIC and HICUM, which have been optimized for HBT, are introduced, and the AgilentHBT model specially developed for III-V group compound HBT devices is described in detail. In this paper, the model extraction of VBIC,HICUM,AgilentHBT three kinds of models DC / 66GHz is completed, and the parameter fitting accuracy of the three kinds of models is compared on the DC, transit time and characteristic frequency curve. A model suitable for parameter extraction of HBT millimeter wave submillimeter band based on InP is obtained. At the end of the paper, the complete process of large signal modeling of InP based HBT devices in the frequency band of 75 脳 110GHz and 220 鹵325GHz by using AgilentHBT model is introduced, and the relationship between DC and voltage capacitance and transit time is also introduced. The accuracy of the model is verified on the characteristic frequency and S parameters. Finally, based on the 220GHz-325GHz test data, the stability change process of the device caused by different factors is analyzed.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8

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本文編號：2480548