微波毫米波功率放大器的研究與設(shè)計(jì)
發(fā)布時(shí)間：2019-05-17 02:17
【摘要】：現(xiàn)代社會(huì)中,無線電通信技術(shù)與市場日益成熟,通信頻段資源愈發(fā)地緊張,低頻頻段的頻譜資源已被開拓殆盡,毫米波頻段則尚有很大的利用空間,且其還擁有通信帶寬較寬等優(yōu)點(diǎn)。于是,毫米波頻段便作為目前電子技術(shù)全新拓展的主要頻段,在通信,雷達(dá),制導(dǎo)等方面有了廣泛的發(fā)展與應(yīng)用。而作為微波,毫米波收發(fā)電路中的核心器件的功率放大器,整個(gè)通訊系統(tǒng)的性能將直接受其影響,因此對(duì)其的研究具有重要意義。同時(shí),微波頻段器件所需要的加工精度和其工作頻率對(duì)應(yīng)的波長有關(guān),其波長越短,對(duì)加工精度要求便越高。為了滿足加工精度的要求,工作頻率在X波段及以上的器件都更傾向于用單片微波集成電路(Monolithic Microwave Integrated Circuit,MMIC)的方式來實(shí)現(xiàn),MMIC是一種同一塊半導(dǎo)體基板上同時(shí)集成了有源以及無源元器件的微波電路,其與普通的微波集成電路(Microwave Integrated Circuit,MIC)的區(qū)別在于,后者是一種不同元器件使用不同加工工藝的混合集成電路,其通過將有源元件和無源元件通過焊接或?qū)щ娔z黏接等外部連接的方式集成于同一個(gè)基片上,其缺點(diǎn)在于重復(fù)生產(chǎn)能力差,需要手工調(diào)整電路來達(dá)到性能指標(biāo),這使得其不適用于批量生產(chǎn)。本文基于WIN半導(dǎo)體的GaAs pHEMT工藝,著重探究了Ka波段功率放大器的設(shè)計(jì)理論與方法,涉及寬帶匹配結(jié)構(gòu)、芯片面積壓縮技巧、低頻穩(wěn)定性和非線性穩(wěn)定性的穩(wěn)定方法等。設(shè)計(jì)并仿真了一個(gè)工作頻帶位于32-40GHz的寬帶高效率功放,其基于WIN半導(dǎo)體PP1011工藝,流片加工并通過了測(cè)試,測(cè)量的數(shù)據(jù)顯示,帶內(nèi)輸出功率100mW,帶內(nèi)PAE在30%-35.5%之間。此外,設(shè)計(jì)了一個(gè)工作頻帶位于28-31GHz的2W高線性度功放,其基于WIN半導(dǎo)體PP1551工藝,該項(xiàng)目完成了第一輪設(shè)計(jì)、流片。測(cè)試結(jié)果表明其回波特性,IM3指標(biāo)基本滿足要求,工作頻帶的高頻部分飽和輸出功率及PAE有所不足,整體小信號(hào)增益也有所欠缺,經(jīng)分析得出原因后將在第二輪流片設(shè)計(jì)時(shí)對(duì)其進(jìn)行改進(jìn)。同時(shí)設(shè)計(jì)了一款工作于33-36GHz的T/R芯片,其同樣基于WIN半導(dǎo)體PP1011工藝,整版電磁仿真結(jié)果基本符合指標(biāo)要求。在33GHz-36GHz的工作頻帶內(nèi),功放部分電路的輸入回波優(yōu)于13dB,輸出回波優(yōu)于7dB,小信號(hào)增益大于13dB,飽和輸出功率大于28dBm,PAE大于22%;低噪放部分的兩個(gè)端口的回波損耗都優(yōu)于17dB,小信號(hào)增益大于13dB;噪聲因子小于2.3dB。
[Abstract]:In modern society, radio communication technology and market are becoming more and more mature, communication band resources are becoming more and more tight, spectrum resources of low frequency band have been exploited, millimeter wave frequency band still has a lot of utilization space. And it also has the advantages of wide communication bandwidth. Therefore, millimeter wave band, as the main frequency band of electronic technology, has been widely developed and applied in communication, radar, guidance and so on. As the power amplifier of the core device in microwave and millimeter wave transceiver circuit, the performance of the whole communication system will be directly affected by it, so the research on it is of great significance. At the same time, the machining accuracy of microwave band devices is related to the wavelength corresponding to its working frequency. The shorter the wavelength is, the higher the machining accuracy is. In order to meet the requirements of machining accuracy, devices with operating frequency of X band and above are more inclined to be realized by single chip microwave integrated circuit (Monolithic Microwave Integrated Circuit,MMIC). MMIC is a kind of microwave circuit which integrates both active and passive components on the same semiconductor substrate, which is different from the ordinary microwave integrated circuit (Microwave Integrated Circuit,MIC. The latter is a hybrid integrated circuit with different components using different processing processes, which integrates active and passive components on the same substrate by welding or conductive adhesive bonding and other external connections. The disadvantage is that the repeated production capacity is poor and the circuit needs to be adjusted manually to achieve the performance index, which makes it not suitable for mass production. Based on the GaAs pHEMT process of WIN semiconductor, the design theory and method of Ka band power amplifier are discussed in this paper, including broadband matching structure, chip area compression technique, low frequency stability and nonlinear stability. A broadband high efficiency power amplifier with operating band located in 32-40GHz is designed and simulated. Based on WIN semiconductor PP1011 process, the chip is processed and tested. The measured data show that the in-band output power is 100MW. The in-band PAE was between 30% and 35.5%. In addition, a 2W high linearity power amplifier located in 28-31GHz is designed, which is based on WIN semiconductor PP1551 process. The first round design of the project is completed. The test results show that the echo characteristics and IM3 index basically meet the requirements, the high frequency partial saturated output power and PAE of the working frequency band are insufficient, and the overall small signal gain is also deficient. After analyzing the reason, it will be improved in the second round flow sheet design. At the same time, a T 鈮，
本文編號(hào)：2478726
[Abstract]:In modern society, radio communication technology and market are becoming more and more mature, communication band resources are becoming more and more tight, spectrum resources of low frequency band have been exploited, millimeter wave frequency band still has a lot of utilization space. And it also has the advantages of wide communication bandwidth. Therefore, millimeter wave band, as the main frequency band of electronic technology, has been widely developed and applied in communication, radar, guidance and so on. As the power amplifier of the core device in microwave and millimeter wave transceiver circuit, the performance of the whole communication system will be directly affected by it, so the research on it is of great significance. At the same time, the machining accuracy of microwave band devices is related to the wavelength corresponding to its working frequency. The shorter the wavelength is, the higher the machining accuracy is. In order to meet the requirements of machining accuracy, devices with operating frequency of X band and above are more inclined to be realized by single chip microwave integrated circuit (Monolithic Microwave Integrated Circuit,MMIC). MMIC is a kind of microwave circuit which integrates both active and passive components on the same semiconductor substrate, which is different from the ordinary microwave integrated circuit (Microwave Integrated Circuit,MIC. The latter is a hybrid integrated circuit with different components using different processing processes, which integrates active and passive components on the same substrate by welding or conductive adhesive bonding and other external connections. The disadvantage is that the repeated production capacity is poor and the circuit needs to be adjusted manually to achieve the performance index, which makes it not suitable for mass production. Based on the GaAs pHEMT process of WIN semiconductor, the design theory and method of Ka band power amplifier are discussed in this paper, including broadband matching structure, chip area compression technique, low frequency stability and nonlinear stability. A broadband high efficiency power amplifier with operating band located in 32-40GHz is designed and simulated. Based on WIN semiconductor PP1011 process, the chip is processed and tested. The measured data show that the in-band output power is 100MW. The in-band PAE was between 30% and 35.5%. In addition, a 2W high linearity power amplifier located in 28-31GHz is designed, which is based on WIN semiconductor PP1551 process. The first round design of the project is completed. The test results show that the echo characteristics and IM3 index basically meet the requirements, the high frequency partial saturated output power and PAE of the working frequency band are insufficient, and the overall small signal gain is also deficient. After analyzing the reason, it will be improved in the second round flow sheet design. At the same time, a T 鈮，
本文編號(hào)：2478726
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