發(fā)布時(shí)間：2018-12-19 21:13

【摘要】：IGBT作為電力電子領(lǐng)域里的關(guān)鍵器件在行業(yè)內(nèi)的地位不言而喻,IGBT驅(qū)動(dòng)與保護(hù)也成為電力電子技術(shù)的重要發(fā)展方向。隨著技術(shù)研究的不斷深入,越來(lái)越多的IGBT驅(qū)動(dòng)器問(wèn)世,驅(qū)動(dòng)與保護(hù)電路也從最初的主要由分立元件構(gòu)成向芯片化、集成化轉(zhuǎn)變,但是現(xiàn)在市面上流行的集中主流驅(qū)動(dòng)芯片或驅(qū)動(dòng)器仍有不少缺陷,特別是在大功率應(yīng)用條件下,電路復(fù)雜,設(shè)計(jì)成本較高。限制了電力電子裝置向大電壓、大電流、高頻率的發(fā)展。因此,對(duì)大功率IGBT的驅(qū)動(dòng)與保護(hù)研究具有重要的意義。進(jìn)行大功率IGBT驅(qū)動(dòng)及過(guò)壓保護(hù)研究過(guò)程中發(fā)現(xiàn),由于IGBT應(yīng)用于高頻場(chǎng)合,IGBT過(guò)壓主要發(fā)生在IGBT關(guān)斷時(shí)過(guò)壓,通過(guò)saber對(duì)原有的幾種方案仿真并分析對(duì)比,針對(duì)原有的過(guò)壓保護(hù)方案提供了一種新的基于驅(qū)動(dòng)電路的過(guò)壓保護(hù)方案。本文的目的是提供一種新的控制方法去優(yōu)化IGBT關(guān)斷時(shí)的表現(xiàn)。由于在IGBT關(guān)斷時(shí)dtdi/會(huì)非常高,電路中的雜散電感會(huì)產(chǎn)生過(guò)壓。本文詳細(xì)的介紹了這種動(dòng)態(tài)上升電壓控制電路(DVRC電路),這種電路通過(guò)對(duì)電壓上升斜率的抑制能夠很好的控制關(guān)斷過(guò)電壓,從而簡(jiǎn)化了過(guò)壓保護(hù)電路的體積以及制作成本。通過(guò)saber仿真軟件驗(yàn)證本方案的可行性,合理的設(shè)定相關(guān)參數(shù)。本文基于其結(jié)構(gòu)原理和仿真驗(yàn)證,設(shè)計(jì)了一套實(shí)驗(yàn)驗(yàn)證方案,搭建了一套有效的實(shí)驗(yàn)平臺(tái),在實(shí)驗(yàn)的過(guò)程中不斷更改和優(yōu)化電路結(jié)構(gòu),通過(guò)實(shí)驗(yàn)驗(yàn)證了動(dòng)態(tài)上升電壓控制方案(新型DVRC電路)的可行性。
[Abstract]:As a key device in power electronics field, IGBT has a self-evident position in the industry. IGBT driving and protection have also become an important development direction of power electronics technology. With the development of technology research, more and more IGBT drivers come out, and the drive and protection circuits are changed from discrete components to chip and integration. However, there are still many defects in the popular centralized mainstream drive chip or driver, especially in the high power application, the circuit is complex and the design cost is high. It limits the development of power electronic devices to high voltage, high current and high frequency. Therefore, it is of great significance to study the drive and protection of high power IGBT. During the research of high power IGBT drive and overvoltage protection, it is found that because IGBT is used in high frequency field, IGBT overvoltage mainly occurs when IGBT is turned off. Several original schemes are simulated and compared with each other by saber. A new overvoltage protection scheme based on drive circuit is proposed for the original overvoltage protection scheme. The purpose of this paper is to provide a new control method to optimize the performance of IGBT turn-off. Because dtdi/ is very high when IGBT is turned off, stray inductors in the circuit can overvoltage. In this paper, the dynamic rising voltage control circuit (DVRC) is introduced in detail. This circuit can control the off overvoltage well by restraining the voltage rise slope, thus simplifying the volume and production cost of the overvoltage protection circuit. The feasibility of this scheme is verified by saber simulation software, and relevant parameters are set reasonably. Based on its structure principle and simulation verification, this paper designs a set of experimental verification scheme, builds an effective experimental platform, and constantly changes and optimizes the circuit structure in the process of experiment. The feasibility of the dynamic rising voltage control scheme (a new type of DVRC circuit) is verified by experiments.
【學(xué)位授予單位】：華南理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN322.8

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本文編號(hào)：2387468