多孔硅氣敏特性研究
發(fā)布時(shí)間：2018-12-15 23:20
【摘要】：多孔硅材料具有制備工藝簡(jiǎn)單、成本低、易于集成化、對(duì)環(huán)境污染小等特點(diǎn),可以用于檢測(cè)各類氧化性氣體(如N02)和還原性氣體(如CO),是目前熱門的研究氣敏材料之一,其中提高多孔硅表面硅排列的均勻度是提高多孔硅材料靈敏度的主要途徑。本文采用雙槽電化學(xué)法制備多孔硅,并對(duì)制備的多孔硅表面形貌進(jìn)行分析,研究了多孔硅層對(duì)乙醇?xì)怏w氣敏特性的影響,簡(jiǎn)要分析了其氣敏機(jī)理,得到下列結(jié)果：1.利用自制雙槽電化學(xué)腐蝕法成功的制備納米級(jí)孔徑的多孔硅層。分析表明：在高電阻率1-10Ω·cm和低電阻率0.001-0.0016Ω·cm硅片上制備的多孔硅,孔隙率隨著電流密度的增加呈現(xiàn)先增加后減小的特點(diǎn),且在電流密度40mA/cm2時(shí)孔隙率得到最大。電阻率0.01-0.02Ω·cm的硅片上制備的多孔硅,孔隙率隨著電流密度增加而增大。2.分別對(duì)三組多孔硅表面進(jìn)行多孔硅形貌分析。分析表明：電阻率0.01-0.02Ω·cm的硅片上制備的多孔硅比其他兩組均勻性更好,孔徑較小,孔深較深。在40mA/cm2時(shí),表面形貌均勻性最佳。3.研究了電阻率0.01-0.02Ω·cm硅片上制備的多孔硅層對(duì)不同濃度乙醇還原性氣體的氣敏性能。結(jié)果表明：表面均勻性較差的兩組樣品氣敏特性不穩(wěn)定,均勻度較好的其他三個(gè)樣品的氣敏性能穩(wěn)定。在電流密度在40mA/cm2下制備的多孔硅對(duì)各濃度的乙醇?xì)怏w的靈敏度相對(duì)穩(wěn)定,均值達(dá)到2.24。
[Abstract]:Porous silicon has the advantages of simple preparation process, low cost, easy integration, low environmental pollution and so on. It can be used to detect various oxidizing gases (such as N02) and reductive gases (such as CO),). The main way to improve the sensitivity of porous silicon is to improve the uniformity of silicon arrangement on porous silicon surface. In this paper, porous silicon was prepared by two-cell electrochemical method. The surface morphology of porous silicon was analyzed. The effect of porous silicon layer on the gas sensing characteristics of ethanol was studied. The gas sensing mechanism of porous silicon was briefly analyzed, and the following results were obtained: 1. The porous silicon layer with nanometer pore size was successfully prepared by self-made double-cell electrochemical etching method. The results show that the porosity of porous silicon prepared on high resistivity 1-10 惟 cm and low resistivity 0.001-0.0016 惟 cm wafers increases first and then decreases with the increase of current density. The porosity is maximum at current density 40mA/cm2. The porosity of porous silicon prepared on the wafer with resistivity 0.01-0.02 惟 cm increases with the increase of current density. The morphologies of porous silicon on the surface of three groups of porous silicon were analyzed respectively. The results show that the porous silicon prepared on the wafer with resistivity of 0.01-0.02 惟 cm has better homogeneity, smaller pore size and deeper pore depth than the other two groups. In 40mA/cm2, the surface morphology is the best. 3. 3. The gas-sensing properties of porous silicon layer prepared on 0.01-0.02 惟 cm wafer with different concentrations of ethanol reductive gases were studied. The results show that the gas sensitivity of the two groups of samples with poor surface uniformity is unstable, and that of the other three samples with good uniformity is stable. The sensitivity of porous silicon prepared at current density at 40mA/cm2 to ethanol gas at different concentrations is relatively stable, with a mean value of 2.24.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12
[Abstract]:Porous silicon has the advantages of simple preparation process, low cost, easy integration, low environmental pollution and so on. It can be used to detect various oxidizing gases (such as N02) and reductive gases (such as CO),). The main way to improve the sensitivity of porous silicon is to improve the uniformity of silicon arrangement on porous silicon surface. In this paper, porous silicon was prepared by two-cell electrochemical method. The surface morphology of porous silicon was analyzed. The effect of porous silicon layer on the gas sensing characteristics of ethanol was studied. The gas sensing mechanism of porous silicon was briefly analyzed, and the following results were obtained: 1. The porous silicon layer with nanometer pore size was successfully prepared by self-made double-cell electrochemical etching method. The results show that the porosity of porous silicon prepared on high resistivity 1-10 惟 cm and low resistivity 0.001-0.0016 惟 cm wafers increases first and then decreases with the increase of current density. The porosity is maximum at current density 40mA/cm2. The porosity of porous silicon prepared on the wafer with resistivity 0.01-0.02 惟 cm increases with the increase of current density. The morphologies of porous silicon on the surface of three groups of porous silicon were analyzed respectively. The results show that the porous silicon prepared on the wafer with resistivity of 0.01-0.02 惟 cm has better homogeneity, smaller pore size and deeper pore depth than the other two groups. In 40mA/cm2, the surface morphology is the best. 3. 3. The gas-sensing properties of porous silicon layer prepared on 0.01-0.02 惟 cm wafer with different concentrations of ethanol reductive gases were studied. The results show that the gas sensitivity of the two groups of samples with poor surface uniformity is unstable, and that of the other three samples with good uniformity is stable. The sensitivity of porous silicon prepared at current density at 40mA/cm2 to ethanol gas at different concentrations is relatively stable, with a mean value of 2.24.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12
【相似文獻(xiàn)】
相關(guān)期刊論文 前10條
1 孫甲明,張吉英,申德振,范希武;多孔硅的電荷存貯特性與光電壓滯后衰減[J];發(fā)光學(xué)報(bào);1993年02期
2 楊海強(qiáng),鮑希茂,楊志鋒,洪建明;用離子注入控制形成多孔硅發(fā)光圖形[J];半導(dǎo)體學(xué)報(bào);1993年12期
3 范洪雷，侯曉遠(yuǎn)，李U喩睿鷗α�，俞鸣人，蛙]，
本文編號(hào)：2381451
本文鏈接：http://www.lk138.cn/kejilunwen/dianzigongchenglunwen/2381451.html
最近更新
教材專著
