Ag納米粒子局域表面等離子體增強(qiáng)型ZnO量子點(diǎn)紫外光發(fā)射器件研究
發(fā)布時(shí)間：2018-10-08 20:15
【摘要】：直接帶隙寬禁帶(3.37eV)半導(dǎo)體ZnO材料具有高達(dá)60meV的激子束縛能,容易實(shí)現(xiàn)室溫乃至更高溫度下的高效激子發(fā)光,使其成為制備紫外光發(fā)射器件的理想候選材料。而相比于ZnO體材料,ZnO量子點(diǎn)(quantum dots,簡稱QDs)由于量子尺寸效應(yīng),致使其帶隙展寬,發(fā)光藍(lán)移,有望制得更加深紫外發(fā)射的ZnO量子點(diǎn)光發(fā)射器件。近年來,通過金屬局域表面等離子體增強(qiáng)光發(fā)射器件發(fā)光效率方面的研究已逐漸受到大家的重視,而Ag納米粒子局域表面等離子體由于其共振消光峰與ZnO材料的近帶邊激子發(fā)射峰存在一定重疊,因此較為適合應(yīng)用于增強(qiáng)ZnO基紫外光發(fā)射器件的發(fā)光效率。本論文首先將溶膠凝膠法制得的ZnO量子點(diǎn)膠體溶液與AgNO3的乙醇溶液充分混合,一步制得ZnO量子點(diǎn)與Ag納米粒子復(fù)合體系(ZD-Ag NPs),并將此復(fù)合體系應(yīng)用于優(yōu)化后的ZnO量子點(diǎn)紫外光發(fā)射器件中,提升了器件的ZnO近帶邊紫外光發(fā)射效率。具體實(shí)驗(yàn)內(nèi)容如下:(1)通過溶膠凝膠法制得乙醇相中均勻分散的ZnO量子點(diǎn)膠體溶液,并對(duì)其相關(guān)物理特性進(jìn)行了表征分析;隨后將一定量的AgNO3乙醇溶液與之充分混合,在不需要其它任何外界條件參與的情況下,即可一步制得ZnO量子點(diǎn)與Ag納米粒子復(fù)合體系,并可通過控制體系的反應(yīng)時(shí)間從而調(diào)節(jié)Ag納米粒子的消光峰位。(2)設(shè)計(jì)構(gòu)建了p-GaN/ZnO QDs(30nm)/Al2O3/ZnO QDs(120nm)結(jié)構(gòu)的ZnO量子點(diǎn)紫外光發(fā)射器件,并與p-GaN/ZnO QDs(150nm)結(jié)構(gòu)的傳統(tǒng)PN結(jié)型光發(fā)射器件進(jìn)行對(duì)比研究。結(jié)果表明:我們所設(shè)計(jì)的ZnO量子點(diǎn)紫外光發(fā)射器件擁有更高的光發(fā)射效率和相對(duì)更強(qiáng)的ZnO近帶邊紫外光發(fā)射強(qiáng)度,總體發(fā)光峰位藍(lán)移。(3)將制得的ZD-Ag NPs應(yīng)用于上述ZnO量子點(diǎn)紫外光發(fā)射器件中,替代其中的ZnO QDs(120nm)層,既作為電子注入層又巧妙地引入了Ag納米粒子,構(gòu)建成Ag納米粒子修飾的ZnO量子點(diǎn)紫外光發(fā)射器件,并最終成功提升了器件的紫外光發(fā)射效率。隨后,通過對(duì)比分析ZD-Ag NPs與純ZnO量子點(diǎn)樣品的熒光壽命和變溫光致發(fā)光譜等,驗(yàn)證了其發(fā)光增強(qiáng)來源于Ag納米粒子局域表面等離子體與ZnO近帶邊激子和光子的共振耦合作用。
[Abstract]:Direct band-gap wide band gap (3.37eV) semiconductor ZnO has high exciton binding energy up to 60meV. It is easy to realize high efficiency exciton luminescence at room temperature or higher temperature, making it an ideal candidate material for UV emission devices. Compared with the ZnO bulk material, (quantum dots, QDs (QDs), due to the quantum size effect, lead to the broadening of the band gap and the blue shift of luminescence, which is expected to lead to a deeper ultraviolet emission of ZnO QDs. In recent years, the research on the luminous efficiency of optical emission devices enhanced by metal local surface plasmas has been paid more and more attention. Because the resonance extinction peak of Ag nanoparticles overlaps with the near band exciton emission peak of ZnO materials, it is suitable to enhance the luminescence efficiency of ZnO based UV emission devices. In this paper, the ZnO quantum dot colloidal solution prepared by sol-gel method and the ethanol solution of AgNO3 were first mixed. The ZnO quantum dot / Ag nanoparticles composite system (ZD-Ag NPs),) was prepared in one step and applied to the optimized ZnO quantum dot UV emission device. The ZnO near-edge UV emission efficiency of the device was improved. The experimental contents are as follows: (1) the uniformly dispersed ZnO quantum dot colloidal solution in ethanol phase was prepared by sol-gel method, and its related physical properties were characterized and analyzed, and then a certain amount of AgNO3 ethanol solution was fully mixed with it. The composite system of ZnO quantum dots and Ag nanoparticles can be prepared in one step without any other external conditions. The extinction peak of Ag nanoparticles can be adjusted by controlling the reaction time of the system. (2) A ZnO QDs with p-GaN/ZnO QDs (30nm) / Al _ 2O _ 3 / QDs (120nm) structure are designed and fabricated, and compared with the traditional PN junction optical emission devices with p-GaN/ZnO QDs (150nm) structure. The results show that the ZnO quantum dot ultraviolet emission device has higher optical emission efficiency and stronger near-band ultraviolet emission intensity of ZnO. (3) the ZD-Ag NPs has been used in the UV emission devices of the ZnO quantum dots to replace the ZnO QDs (120nm) layer, which is used as the electron injection layer and the Ag nanoparticles are introduced skillfully. The UV emission devices of ZnO quantum dots modified by Ag nanoparticles were constructed, and the UV emission efficiency of the devices was improved successfully. Then, the fluorescence lifetime and variable-temperature photoluminescence spectra of ZD-Ag NPs and pure ZnO quantum dot samples are compared and analyzed. It is verified that the enhanced luminescence originates from the resonance coupling between local surface plasmas of Ag nanoparticles and ZnO near-edge excitons and photons.
【學(xué)位授予單位】：東北師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304.21;TN23
本文編號(hào)：2258122
[Abstract]:Direct band-gap wide band gap (3.37eV) semiconductor ZnO has high exciton binding energy up to 60meV. It is easy to realize high efficiency exciton luminescence at room temperature or higher temperature, making it an ideal candidate material for UV emission devices. Compared with the ZnO bulk material, (quantum dots, QDs (QDs), due to the quantum size effect, lead to the broadening of the band gap and the blue shift of luminescence, which is expected to lead to a deeper ultraviolet emission of ZnO QDs. In recent years, the research on the luminous efficiency of optical emission devices enhanced by metal local surface plasmas has been paid more and more attention. Because the resonance extinction peak of Ag nanoparticles overlaps with the near band exciton emission peak of ZnO materials, it is suitable to enhance the luminescence efficiency of ZnO based UV emission devices. In this paper, the ZnO quantum dot colloidal solution prepared by sol-gel method and the ethanol solution of AgNO3 were first mixed. The ZnO quantum dot / Ag nanoparticles composite system (ZD-Ag NPs),) was prepared in one step and applied to the optimized ZnO quantum dot UV emission device. The ZnO near-edge UV emission efficiency of the device was improved. The experimental contents are as follows: (1) the uniformly dispersed ZnO quantum dot colloidal solution in ethanol phase was prepared by sol-gel method, and its related physical properties were characterized and analyzed, and then a certain amount of AgNO3 ethanol solution was fully mixed with it. The composite system of ZnO quantum dots and Ag nanoparticles can be prepared in one step without any other external conditions. The extinction peak of Ag nanoparticles can be adjusted by controlling the reaction time of the system. (2) A ZnO QDs with p-GaN/ZnO QDs (30nm) / Al _ 2O _ 3 / QDs (120nm) structure are designed and fabricated, and compared with the traditional PN junction optical emission devices with p-GaN/ZnO QDs (150nm) structure. The results show that the ZnO quantum dot ultraviolet emission device has higher optical emission efficiency and stronger near-band ultraviolet emission intensity of ZnO. (3) the ZD-Ag NPs has been used in the UV emission devices of the ZnO quantum dots to replace the ZnO QDs (120nm) layer, which is used as the electron injection layer and the Ag nanoparticles are introduced skillfully. The UV emission devices of ZnO quantum dots modified by Ag nanoparticles were constructed, and the UV emission efficiency of the devices was improved successfully. Then, the fluorescence lifetime and variable-temperature photoluminescence spectra of ZD-Ag NPs and pure ZnO quantum dot samples are compared and analyzed. It is verified that the enhanced luminescence originates from the resonance coupling between local surface plasmas of Ag nanoparticles and ZnO near-edge excitons and photons.
【學(xué)位授予單位】：東北師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304.21;TN23
【參考文獻(xiàn)】
相關(guān)期刊論文 前3條
1 王悅輝,莊志強(qiáng);溶膠-凝膠技術(shù)的研究與應(yīng)用[J];陶瓷研究與職業(yè)教育;2003年01期
2 許北雪,吳錦雷,劉盛,郭等柱,邵慶益,劉惟敏,薛增泉,吳全德;稀土鑭對(duì)真空蒸發(fā)沉積銀納米粒子團(tuán)聚的影響[J];物理化學(xué)學(xué)報(bào);2002年01期
3 王德憲;溶膠—凝膠法的化學(xué)原理簡述[J];玻璃;1998年01期
，本文編號(hào)：2258122
本文鏈接：http://www.lk138.cn/kejilunwen/dianzigongchenglunwen/2258122.html
最近更新
教材專著
