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半導體致冷器對SLD光源內(nèi)部電場的影響

發(fā)布時間:2018-09-12 11:08
【摘要】:針對超輻射發(fā)光二極管(Super Luminescent Diode,SLD)光源輸出光功率穩(wěn)定性的需求,從光源的溫控電路出發(fā),建立了SLD恒流回路與半導體致冷器(TEC)之間的電場耦合模型,探討了SLD光源的重要組件——TEC對其內(nèi)部電場的影響;分析了光源內(nèi)部不同組件間的分布電容。研究結(jié)果表明:溫控電路產(chǎn)生的交流分量作用于光源內(nèi)部半導體致冷器,產(chǎn)生時變電場,經(jīng)分布電容耦合到恒流回路中,影響輸出光功率的穩(wěn)定性;SLD光源外殼接地良好,可減小分布電容,從而減小電場耦合對輸出光功率的影響。
[Abstract]:According to the requirement of the stability of output power of superluminescent diode (Super Luminescent Diode,SLD) light source, the electric field coupling model between the SLD constant current circuit and the semiconductor cooler (TEC) is established from the temperature control circuit of the light source. The influence of the important component of the SLD light source on the internal electric field is discussed, and the distributed capacitance between the different components of the light source is analyzed. The results show that the AC component produced by the temperature control circuit acts on the semiconductor cooler inside the light source and produces a time-varying electric field. The stability of the SLD light source shell which affects the output optical power is well grounded because the distributed capacitance is coupled to the constant current circuit. The distributed capacitance can be reduced and the effect of electric field coupling on the output optical power can be reduced.
【作者單位】: 長沙理工大學物理與電子科學學院;
【分類號】:TN312.8

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1 馬東閣;石家緯;劉明大;高鼎三;;超輻射發(fā)光二極管(SLD)[J];半導體情報;1993年06期

2 李嵐,傅麗偉,張納,陶怡,李光e,

本文編號:2238813


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