一種具有VLD終端結(jié)構(gòu)的600V VDMOS設(shè)計(jì)
發(fā)布時(shí)間：2018-09-10 15:32
【摘要】：VDMOS是新一代功率半導(dǎo)體器件,具有優(yōu)良的電學(xué)特性,如輸入阻抗高、驅(qū)動(dòng)功率小、安全工作區(qū)寬,不僅廣泛應(yīng)用在民用領(lǐng)域,而且在軍用領(lǐng)域也得到了很好的應(yīng)用。VDMOS設(shè)計(jì)分為元胞區(qū)域和終端區(qū)域,終端結(jié)構(gòu)的設(shè)計(jì)通常使用場(chǎng)板/場(chǎng)限環(huán)結(jié)構(gòu)。但是使用場(chǎng)板/場(chǎng)限環(huán)結(jié)構(gòu)會(huì)使得芯片的面積大,生產(chǎn)成本高,性價(jià)比低。VLD(Variable Lateral Doping)的終端結(jié)構(gòu)與場(chǎng)板/場(chǎng)限環(huán)結(jié)構(gòu)相比大大的減小了終端長(zhǎng)度,降低了成產(chǎn)成本,提高了性價(jià)比,是新興的、先進(jìn)的終端結(jié)構(gòu)。然而由于國(guó)內(nèi)的VDMOS研究起步較晚,制造工藝與技術(shù)相對(duì)落后,所以基本沒(méi)有VLD終端結(jié)構(gòu)的產(chǎn)品。因而VLD終端產(chǎn)品的研究對(duì)于國(guó)內(nèi)VLD終端產(chǎn)品以及相關(guān)產(chǎn)品的開發(fā)具有重要意義。本論文在某個(gè)相關(guān)項(xiàng)目的基礎(chǔ)上,分析VLD及相關(guān)終端結(jié)構(gòu)的工作機(jī)理,并設(shè)計(jì)相對(duì)應(yīng)的產(chǎn)品。主要的參數(shù)指標(biāo)是:擊穿電壓大于606 V,閾值電壓為2~4 V,通態(tài)壓降小于1 V,導(dǎo)通電阻小于1.25?。本論文的主要目的是提供一種VLD產(chǎn)品的設(shè)計(jì),為后續(xù)的相關(guān)產(chǎn)品開發(fā)提供參照。本論文的主要內(nèi)容如下:1、簡(jiǎn)要介紹終端理論,基于項(xiàng)目合作方的工藝平臺(tái),設(shè)計(jì)工藝流程。通過(guò)Tsuprem4/Medici軟件對(duì)工藝步驟進(jìn)行優(yōu)化,并進(jìn)行VDMOS元胞部分的仿真,使得仿真結(jié)果滿足項(xiàng)目合作方的參數(shù)要求。2、通過(guò)Tsuprem4/Medici軟件進(jìn)行VDMOS終端部分的仿真。首先采用場(chǎng)板/場(chǎng)限環(huán)的終端結(jié)構(gòu),并對(duì)場(chǎng)板/場(chǎng)限環(huán)結(jié)構(gòu)進(jìn)行優(yōu)化,得到尖峰電場(chǎng)小于2x105 V/cm符合要求的結(jié)果。在場(chǎng)板/場(chǎng)限環(huán)結(jié)構(gòu)基礎(chǔ)上,對(duì)終端長(zhǎng)度進(jìn)行縮短,設(shè)計(jì)VLD結(jié)構(gòu),仿真得到電場(chǎng)趨于均勻分布、終端長(zhǎng)度大大減小的最優(yōu)結(jié)果。3、繪制版圖,進(jìn)行流片試驗(yàn)。目前的流片獲得部分靜態(tài)參數(shù)具體結(jié)果如下:場(chǎng)限環(huán)/場(chǎng)板終端結(jié)構(gòu)基本符合要求,而VLD終端結(jié)構(gòu)的擊穿電壓為100 V~400 V。結(jié)果表明:流片數(shù)據(jù)部分不滿足設(shè)計(jì)要求。
[Abstract]:VDMOS is a new generation of power semiconductor devices with excellent electrical properties, such as high input impedance, low driving power and wide safe working area. The design of VDMOS is divided into cellular region and terminal area. The design of the terminal structure usually uses the field plate / field limiting ring structure. But using the field board / field limiting ring structure will make the chip large area, high production cost, low performance-price ratio. The terminal structure of .VLD (Variable Lateral Doping) greatly reduces the terminal length, reduces the production cost and improves the performance-price ratio compared with the field board / field limiting ring structure. Is a new, advanced terminal structure. However, due to the late start of VDMOS research and the backward manufacturing process and technology in China, there is basically no product with VLD terminal structure. Therefore, the research of VLD terminal products is of great significance to the development of domestic VLD terminal products and related products. On the basis of a related project, this paper analyzes the working mechanism of VLD and related terminal structure, and designs the corresponding products. The main parameters are as follows: breakdown voltage is more than 606 V, threshold voltage is 2V, on-state voltage drop is less than 1 V, and on-resistance is less than 1.25 V. The main purpose of this paper is to provide a VLD product design for the subsequent related product development. The main contents of this paper are as follows: 1, briefly introduces the terminal theory, based on the process platform of the project partner, designs the process flow. The process steps are optimized by Tsuprem4/Medici software, and the simulation of VDMOS cell part is carried out, which makes the simulation results meet the requirements of the parameter of the project partner. Secondly, the simulation of VDMOS terminal part is carried out by Tsuprem4/Medici software. Firstly, the terminal structure of the field plate / field limiting ring is adopted, and the structure of the field plate / field limiting ring is optimized, and the result that the peak electric field is less than 2x105 V/cm is obtained. On the basis of the field plate / field limiting ring structure, the terminal length is shortened and the VLD structure is designed. The simulation results show that the electric field tends to be uniformly distributed and the terminal length is greatly reduced. Finally, the layout is drawn and the flow sheet test is carried out. At present, some static parameters are obtained as follows: the structure of field limiting ring / field plate terminal basically meets the requirements, while the breakdown voltage of VLD terminal structure is 100V / 400V. The results show that the flow sheet data can not meet the design requirements.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386
[Abstract]:VDMOS is a new generation of power semiconductor devices with excellent electrical properties, such as high input impedance, low driving power and wide safe working area. The design of VDMOS is divided into cellular region and terminal area. The design of the terminal structure usually uses the field plate / field limiting ring structure. But using the field board / field limiting ring structure will make the chip large area, high production cost, low performance-price ratio. The terminal structure of .VLD (Variable Lateral Doping) greatly reduces the terminal length, reduces the production cost and improves the performance-price ratio compared with the field board / field limiting ring structure. Is a new, advanced terminal structure. However, due to the late start of VDMOS research and the backward manufacturing process and technology in China, there is basically no product with VLD terminal structure. Therefore, the research of VLD terminal products is of great significance to the development of domestic VLD terminal products and related products. On the basis of a related project, this paper analyzes the working mechanism of VLD and related terminal structure, and designs the corresponding products. The main parameters are as follows: breakdown voltage is more than 606 V, threshold voltage is 2V, on-state voltage drop is less than 1 V, and on-resistance is less than 1.25 V. The main purpose of this paper is to provide a VLD product design for the subsequent related product development. The main contents of this paper are as follows: 1, briefly introduces the terminal theory, based on the process platform of the project partner, designs the process flow. The process steps are optimized by Tsuprem4/Medici software, and the simulation of VDMOS cell part is carried out, which makes the simulation results meet the requirements of the parameter of the project partner. Secondly, the simulation of VDMOS terminal part is carried out by Tsuprem4/Medici software. Firstly, the terminal structure of the field plate / field limiting ring is adopted, and the structure of the field plate / field limiting ring is optimized, and the result that the peak electric field is less than 2x105 V/cm is obtained. On the basis of the field plate / field limiting ring structure, the terminal length is shortened and the VLD structure is designed. The simulation results show that the electric field tends to be uniformly distributed and the terminal length is greatly reduced. Finally, the layout is drawn and the flow sheet test is carried out. At present, some static parameters are obtained as follows: the structure of field limiting ring / field plate terminal basically meets the requirements, while the breakdown voltage of VLD terminal structure is 100V / 400V. The results show that the flow sheet data can not meet the design requirements.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386
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