【摘要】：聲表面波濾波器(SAWF)工作頻率在寬溫度范圍內(nèi)高度穩(wěn)定是電子系統(tǒng)頻譜控制的關(guān)鍵。已成為當前SAWF發(fā)展的主要技術(shù)方向。該文提出了基于多層微結(jié)構(gòu)壓電材料的的SAWF溫度補償技術(shù)方案,實現(xiàn)了基于鉭酸鋰(LT)壓電基片上的溫度補償SAWF設(shè)計、仿真,并獲得了滿意的實驗結(jié)果。基于LT/Si復合片法實現(xiàn)的SAWF頻率溫度系數(shù)在全溫范圍(-55~+85℃)內(nèi)達到25×10~(-6)/℃;基于SiO_2/LT薄膜補償法實現(xiàn)的SAWF頻率溫度系數(shù)在全溫范圍(-55~+85℃)內(nèi)小于10×10~(-6)/℃。研制的溫度補償聲表面波濾波器(TC-SAWF)達到要求,已在系統(tǒng)中得到應用。
[Abstract]:The high stability of the (SAWF) operating frequency in the wide temperature range is the key to the spectrum control of the electronic system. Has become the current SAWF development of the main technical direction. In this paper, a SAWF temperature compensation scheme based on multilayer micro structure piezoelectric material is proposed. The design and simulation of temperature compensation SAWF based on lithium tantalate (LT) piezoelectric substrate are realized, and satisfactory experimental results are obtained. The SAWF frequency temperature coefficient based on LT/Si composite method is 25 脳 10 ~ (-6) / 鈩，

本文編號：2232904