發(fā)布時間：2018-09-06 15:13

【摘要】：小型化的大功率、高效率毫米波器件,在國防裝備中能夠滿足機載、星載的需求,其功率量級是其他器件不可替代的。帶狀束擴展互作用振蕩管(sheet beam extended interaction oscillator,SBEIO)的大功率、高效率、小型化、高可靠性使之在星載、機載毫米波器件方面有著優(yōu)良的表現(xiàn)。本文針對受均勻高頻場調制的電子注,在腔體主要互作用區(qū)域經過換能后,注波同步條件被破壞,影響注波互作用效率的問題進行研究。在Ka波段設計一種高效率的9個互作用間隙的梯形高頻結構。對這種Ka波段高頻結構進行冷場仿真、粒子模擬仿真和冷腔測試。均勻高頻場調制下,在34 kV,3.5A電子注尺寸8 mm×0.6 mm的直流輸入下,SBEIO的輸出功率為21.6 kW,效率18.1%。本文提出了一種逐漸增強的縱向電場分布來提升注波互作用效率,功率從均勻場仿真的21.6 kW增加到28.1 kW,電子效率從18.1%上升到23.6%。采用相位重匹配技術對該結構進一步優(yōu)化,使互作用效率得到進一步提升功率從28.5 kW增加到36 kW,電子效率從23.6%上升到30%。對優(yōu)化過程中出現(xiàn)的模式競爭問題進行處理,優(yōu)化諧振腔結構,將競爭模式π/8模引出諧振腔,成功抑制了模式競爭。根據(jù)實際需求和加工水準,對所設計的Ka波段SBEIO的高頻結構進行加工,并采用矢量網(wǎng)絡分析儀進行冷腔測試,仿真和冷測取得較好的一致性,為進一步的熱測實驗奠定基礎。探究更高頻段、更多互作用間隙、更高橫縱比的帶狀電子束高頻結構。具體在W波段設計了一種15個互作用間隙,帶狀束橫縱比15:1的梯形高頻結構,直流電子注電壓為44.4 kV,電流2 A,電子注尺寸為6 mm×0.4 mm下可得到功率6.7 kW,效率7.5%。對W波段的設計的高頻結構進行加工,對加工模型使用矢量網(wǎng)絡分析儀進行冷測和整管熱測,電子流通率高達99.5%,最終,在輸出48kV,1.8A時,95.09 GHz的電磁波輸出功率可以達到2.1 kW。本文探究了提高梯形高頻結構的互作用效率的方法,是大功率、小型化的毫米波源實現(xiàn)的至關重要的一步,可以為星載、機載應用場合提供可靠的大功率毫米波輻射源。
[Abstract]:The miniaturized high power and high efficiency millimeter-wave devices can meet the requirements of airborne and spaceborne in national defense equipment, and their power level is irreplaceable for other devices. The high power, high efficiency, miniaturization and high reliability of the band-beam extended interacting oscillator (sheet beam extended interaction oscillator,SBEIO) make it have excellent performance in spaceborne and airborne millimeter-wave devices. In this paper, the beam synchronization condition is destroyed and the efficiency of beam-wave interaction is affected by the electron beam modulated by uniform high-frequency field after the energy transfer in the main interaction region of the cavity. A high efficiency trapezoidal high frequency structure with 9 interaction gaps is designed in Ka band. The cold field simulation, particle simulation and cold cavity test are carried out for this Ka band high frequency structure. Under uniform high frequency field modulation, the output power of SBEIO is 21.6 kW, efficiency 18.1 at the DC input of 34 kV,3.5A electron beam size of 8 mm 脳 0.6 mm. In this paper, an increasing longitudinal electric field distribution is proposed to improve the beam-wave interaction efficiency. The power increases from 21.6 kW to 28.1 kW, electron efficiency from 18.1% to 23.6% in uniform field simulation. The phase rematch technique is used to further optimize the structure and further increase the interaction efficiency from 28.5 kW to 36 kW, from 23.6% to 30%. This paper deals with the problem of mode competition in the optimization process, optimizes the structure of the resonator and leads out the 蟺 / 8 mode of the competition mode to the resonator, which successfully inhibits the mode competition. According to the actual demand and processing level, the high frequency structure of the designed Ka band SBEIO is processed, and the cold cavity is tested by vector network analyzer. The simulation and the cold measurement obtain good consistency, which lays a foundation for further thermal measurement experiments. Explore the high frequency band electron beam structure with higher frequency band, more interaction gap and higher aspect ratio. A high frequency trapezoidal structure with a band beam transverse to longitudinal ratio of 15:1 is designed in W band. The DC electron beam voltage is 44.4 kV, current 2 A, and the electron beam size is 6 mm 脳 0.4 mm. The power 6.7 kW, efficiency is obtained. The high frequency structure designed in W band was machined, and the processing model was measured by vector network analyzer. The electron flow rate was up to 99.5. Finally, the output power of electromagnetic wave of 95.09 GHz could reach 2.1 kW. when the output was 48kV / 1.8A. In this paper, the method of improving the interaction efficiency of trapezoidal high frequency structure is explored. It is a very important step in the realization of high power and miniaturized millimeter wave source. It can provide reliable high power millimeter wave radiation source for spaceborne and airborne applications.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN103

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