本文選題：電卡效應(yīng) + 反鐵電厚膜　； 參考：《內(nèi)蒙古科技大學(xué)》2015年碩士論文

【摘要】：隨著現(xiàn)代工業(yè)的飛速發(fā)展，微電子器件逐漸向集成化、小型化、輕量化和多功能化的趨勢(shì)發(fā)展，導(dǎo)致器件溫度急劇上升，嚴(yán)重影響器件的性能和工作壽命。因此，散熱技術(shù)已經(jīng)成為制約微電子器件繼續(xù)微型化發(fā)展的障礙。傳統(tǒng)的壓縮致冷不能滿足微電子系統(tǒng)局部致冷的要求，且會(huì)污染環(huán)境�；�于以上事實(shí)，探索利用電卡效應(yīng)的致冷技術(shù)及其器件化具有重要的意義。PbZrO3是一種典型的反鐵電體，在外場的作用下，發(fā)生反鐵電-鐵電及反鐵電-順電相變，相變過程中會(huì)引起巨大的熵變，從而產(chǎn)生巨大的電卡效應(yīng)。本文中采用sol-gel技術(shù)制備PbZrO3基反鐵電厚膜材料，并對(duì)其電卡效應(yīng)致冷行為進(jìn)行深入研究。 首先，采用PVP改性的sol-gel技術(shù)制備(Pb0.97La0.02)(Zr0.75Sn0.18Ti0.07)O3反鐵電厚膜，并對(duì)其顯微結(jié)構(gòu)、介電性能、致冷行為和漏電流性能進(jìn)行深入研究。900kV/cm電場下，厚膜在5℃時(shí)獲得最大的電卡效應(yīng)溫度變化為53.8℃，熵變?yōu)?3.9J·K-1·kg-1。 其次，研究組分摻雜和組分梯度結(jié)構(gòu)對(duì)反鐵電厚膜顯微結(jié)構(gòu)、介電性能、致冷行為和漏電流性能的影響。研究表明：(Pb1-3x/2Lax)(Zr0.85Ti0.15)O3厚膜的飽和極化強(qiáng)度、介電常數(shù)、居里溫度和漏電流密度隨著La含量的增加逐漸降低，當(dāng)La=8mol%時(shí)，厚膜在990kV/cm電場下獲得最大的電卡效應(yīng)， T=25.0℃；當(dāng)Ti含量恒定，隨著Zr/Sn摩爾比的增加，(Pb0.97La0.02)(Zr1-xSnxTi0.05)O3厚膜的飽和極化強(qiáng)度，居里溫度和漏電流密度增大，當(dāng)Zr/Sn摩爾比為75/20時(shí)，即位于準(zhǔn)同型相界附近的厚膜在室溫900kV/cm電場下獲得最大電卡效應(yīng)，， T=33.0℃；與單組分厚膜相比，(Pb1-3x/2Lax)(Zr0.85Ti0.15)O3組分梯度結(jié)構(gòu)厚膜具有更優(yōu)的介電性能和致冷行為，且上梯度厚膜在室溫900kV/cm電場時(shí)具有最大電卡效應(yīng)為T=28.2℃。 最后，研究了不同種類氧化物緩沖層和生長取向?qū)?Pb0.97La0.02)(Zr1-xSnxTi0.05)O3反鐵電厚膜顯微結(jié)構(gòu)及性能的影響。結(jié)果表明：引入氧化物緩沖層后，該體系厚膜的極化強(qiáng)度、介電常數(shù)和電卡效應(yīng)均有不同程度的提高，其中，引入ZrO2緩沖層的(Pb0.97La0.02)(Zr0.57Sn0.38Ti0.05)O3反鐵電厚膜在室溫900kV/cm電場下獲得最大的電卡效應(yīng)， T=37.1℃；(Pb0.97La0.02)(Zr0.73Sn0.22Ti0.05)O3反鐵電厚膜的介電性能和致冷行為具有明顯的各向異性，(111)取向的厚膜在室溫900kV/cm電場下具有最大的電卡效應(yīng)， T=28.1℃。
[Abstract]:With the rapid development of modern industry, microelectronic devices are gradually becoming integrated, miniaturized, lightweight and multifunctional, which leads to a sharp rise in device temperature, which seriously affects the performance and working life of the devices. Therefore, heat dissipation technology has become an obstacle to the development of microelectronic devices. The traditional compression cooling can not meet the requirement of local cooling in microelectronic system, and it will pollute the environment. Based on the above facts, it is of great significance to explore the refrigeration technology and its devication using the electric card effect. PbZrO3 is a typical antiferroelectrics, and the antiferroelectric-ferroelectric and antiferroelectric phase transitions occur under the action of the external field. In the process of phase transition, a huge entropy change will be caused, which will result in a huge electric-card effect. In this paper, the antiferroelectric thick film based on PbZrO3 was prepared by sol-gel technique, and the cooling behavior of the film was studied. Firstly, the antiferroelectric thick films of Pb0.97La0.02CnZr0.75Sn0.18Ti0.07O _ 3 were prepared by PVP modified sol-gel technique. The microstructure, dielectric properties, cooling behavior and leakage current properties of the films were studied in the .900kV / cm electric field. At 5 鈩

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