【摘要】：本文利用射頻磁控濺射技術(shù)制備GZO透明導(dǎo)電薄膜,研究了濺射壓強(qiáng)、濺射功率、高溫退火、H等離子處理等工藝對薄膜性能的影響,制得了光電性能優(yōu)異的GZO透明導(dǎo)電薄膜。在此基礎(chǔ)上,設(shè)計了GZO薄膜用作硅基太陽能電池透明窗口和電極的新型太陽能電池,開展了前期測試與研究。主要工作內(nèi)容包括： 1.采用射頻磁控濺射技術(shù)在玻璃襯底上生長了高透明導(dǎo)電的GZO薄膜,研究了濺射壓強(qiáng)、濺射功率對GZO薄膜結(jié)構(gòu)、形貌、電學(xué)性能、光電性能的影響以及GZO薄膜在H等離子體中的穩(wěn)定性和在不同氣氛下的高溫穩(wěn)定性。薄膜均呈現(xiàn)C軸擇優(yōu)取向生長,在可見光范圍平均透過率均大于90%。GZO薄膜在300℃、0.2Pa、180W條件下獲得最優(yōu)光電性能。氬氣氣氛和真空下退火的GZO薄膜電學(xué)性能明顯提高,而氧氣氣氛退火的則相反。H等離子體處理后的GZO薄膜表面粗糙度明顯增加,而GZO透明導(dǎo)電薄膜在H等離子體環(huán)境中的光電性能表現(xiàn)穩(wěn)定,驗證了H等離子體處理用于GZO物理制絨的可行性。 2.在GZO透明導(dǎo)電薄膜制備已經(jīng)比較系統(tǒng)的基礎(chǔ)上,設(shè)計了GZO用作透明窗口和電極的新型晶體硅太陽能電池。GZO透明導(dǎo)電薄膜作為收集載流子的窗口,可減少銀柵電極的使用,減少載流子橫向運動引起的高接觸電阻,并增加有效受光面積,降低成本。隨后,考慮到要在高溫下制備背電極,我們進(jìn)行了退火處理及測試表征,分析討論了退火對GZO/Si、背電極接觸和電池性能的影響。之后改進(jìn)了電池結(jié)構(gòu)設(shè)計,加入一層ITO緩沖層,電池的開路電壓、短路電流密度及電池光電轉(zhuǎn)換效率都顯著增加,并分析了具有不同膜厚的ITO對復(fù)合膜和對電池性能的影響。
[Abstract]:In this paper, GZO transparent conductive thin films were prepared by RF magnetron sputtering. The effects of sputtering pressure, sputtering power and high temperature annealed H plasma on the properties of the films were studied. The transparent conductive GZO thin films with excellent optoelectronic properties were prepared. On this basis, a new type of solar cell with GZO thin film used as transparent window and electrode of silicon based solar cell was designed and tested and studied. The main work includes: 1. High transparent and conductive GZO thin films were grown on glass substrates by RF magnetron sputtering. The effects of sputtering pressure and sputtering power on the structure, morphology and electrical properties of GZO thin films were investigated. The influence of photoelectric properties and the stability of GZO films in H plasma and at high temperature in different atmospheres. The average transmittance of the films in the visible range is higher than that of the 90%.GZO films at 300 鈩，

本文編號：2154003