發(fā)布時(shí)間：2018-01-25 01:09

  本文關(guān)鍵詞： 薄膜微光學(xué) 單點(diǎn)金剛石技術(shù) 納米壓印技術(shù) 金字塔結(jié)構(gòu)　出處：《西安工業(yè)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：薄膜微光學(xué)元件在傳統(tǒng)微光學(xué)元件的基礎(chǔ)上,進(jìn)一步利用具有多層特征的薄膜微結(jié)構(gòu),在折射、反射和衍射的基礎(chǔ)上引入了干涉效應(yīng),而且微觀結(jié)構(gòu)更加復(fù)雜多樣,從而表現(xiàn)出新穎的光學(xué)特性,實(shí)現(xiàn)對(duì)光波特性的復(fù)雜調(diào)制。論文主要研究光學(xué)表面薄膜微結(jié)構(gòu)的制備工藝,包括PECVD法制備單層、多層薄膜,單點(diǎn)金剛石技術(shù)制作母版,納米壓印技術(shù)進(jìn)行軟印章制備、圖形化轉(zhuǎn)移,等離子體刻蝕成型,使用等效介質(zhì)理論和有限元分析法研究該結(jié)構(gòu)的反射光譜特性。具體結(jié)論如下:利用PECVD法在硅和硫化鋅基底上沉積折射率為1.46的氧化硅薄膜,在薄膜沉積的最佳工藝條件下的沉積速率分別為:42.22nm/min、47.64nm/min。以此,研究了折射率為1.46的氧化硅薄膜隨著沉積厚度的增加,其穩(wěn)定性變化情況:折射率無(wú)明顯波動(dòng),其中在硅基底上薄膜應(yīng)力無(wú)明顯變化,但在硫化鋅基底上薄膜應(yīng)力明顯增加。在硅基底上沉積折射率分別為1.5、1.6、1.7和1.8的氮氧化硅薄膜,得到薄膜沉積的最佳工藝條件。沉積了這四種折射率條件下的漸變折射率薄膜。沉積了折射率為1.8且厚度分別為100nm、200nm、500nm、900nm的氮氧化硅薄膜。在單點(diǎn)金剛石技術(shù)制備了母版的基礎(chǔ)上,利用納米壓印技術(shù)和等離子體刻蝕技術(shù)在鍍有氧化硅、氮氧化硅的硅基底上制備以底面積1Oμm×10μm為周期、高5μm的金字塔結(jié)構(gòu),用掃描電鏡測(cè)得結(jié)構(gòu)的微觀形貌清晰,周期為10.5μm×10.8μm、高為4.57μm。分析可得周期的相對(duì)誤差是5%～8%、高度的相對(duì)誤差是8.6%,分析了實(shí)驗(yàn)結(jié)果產(chǎn)生偏差的原因,為后續(xù)改進(jìn)工藝,提高精度提供了依據(jù)。通過使用等效介質(zhì)理論和有限元分析法對(duì)其光譜特性進(jìn)行了分析,模擬單個(gè)金字塔微觀結(jié)構(gòu),仿真得到其反射光場(chǎng)呈周期性分布,其周期隨著波長(zhǎng)的增大而增大。
[Abstract]:On the basis of the traditional microoptical elements, the thin film microstructures with multilayer characteristics are further utilized, and the interference effect is introduced on the basis of refraction, reflection and diffraction. And the microstructure is more complex, thus showing novel optical properties, to achieve the complex modulation of optical wave characteristics. The preparation process of optical surface thin film microstructure is mainly studied in this paper. It includes the preparation of monolayer, multilayer film by PECVD method, master plate made by single point diamond technology, soft seal preparation by nano-imprint technology, graphic transfer and plasma etching molding. The reflectance spectra of the structure were studied by using equivalent medium theory and finite element analysis. The results are as follows: 1.46 Si oxide thin films with refractive index of 1.46 were deposited on silicon and zinc sulfide substrates by PECVD method. The deposition rates under the optimum deposition conditions are: 42.22 nm / min, 47.64 nm / min, respectively. The stability of silicon oxide thin films with refractive index of 1.46 is studied with the increase of deposition thickness: there is no obvious fluctuation of refractive index, and the stress of films on silicon substrate has no obvious change. However, the stress of the films on zinc sulphide substrates is obviously increased. The silicon oxide films with refractive index of 1.5 ~ 1.61.7 and 1.8 are deposited on silicon substrates respectively. The optimum process conditions were obtained. The graded refractive index films were deposited under these four refractive index conditions. The refractive index of the films was 1.8 and the thickness was 100 nm ~ 200nm ~ 500nm, respectively. Based on the preparation of master plate by single point diamond technology, silicon oxide was deposited by nano-imprint and plasma etching. A pyramid structure with a base area of 10 渭 m 脳 10 渭 m and a height of 5 渭 m was prepared on the silicon substrate of silicon oxide. The microstructure of the structure was clear by SEM. The period is 10. 5 渭 m 脳 10. 8 渭 m and the height is 4. 57 渭 m. The relative error of the available period is 5 ~ 8 and the relative error of height is 8.6%. The causes of the deviation of experimental results are analyzed, which provides a basis for further improvement of technology and accuracy. The spectral characteristics are analyzed by using the theory of equivalent medium and finite element analysis. By simulating the microstructure of a single pyramid, it is found that the reflected light field is periodically distributed, and its period increases with the increase of wavelength.
【學(xué)位授予單位】：西安工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O484

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 虎將;蔡長(zhǎng)龍;劉衛(wèi)國(guó);鞏燕龍;;ICP刻蝕Si/PMMA選擇比工藝研究[J];微處理機(jī);2014年01期

2 陳強(qiáng);孫運(yùn)金;周美麗;韓而立;楊麗珍;張躍飛;李朝陽(yáng);許文才;;等離子體技術(shù)制備氧化硅阻隔層薄膜的研究[J];包裝工程;2008年10期

3 杜平凡;席珍強(qiáng);汪新顏;金達(dá)萊;王勇;;RF-PECVD法在鋼襯底上沉積氮化硅薄膜的研究[J];功能材料;2008年03期

4 楊景超;趙鋼;鄔玉亭;;PECVD中電子能量狀態(tài)對(duì)氮化硅薄膜應(yīng)力的影響[J];新技術(shù)新工藝;2007年07期

5 陳宇;王良臣;嚴(yán)麗紅;;PECVD沉積SiO_2和SiN_X對(duì)p-GaN的影響[J];紅外與激光工程;2007年02期

6 韓爾立;陳強(qiáng);葛袁靜;;射頻等離子體聚合SiO_x薄膜的研究[J];真空科學(xué)與技術(shù)學(xué)報(bào);2006年06期

7 王順權(quán);周常河;茹華一;張妍妍;;深刻蝕高密度熔融石英光柵[J];中國(guó)激光;2006年02期

8 崔錚;;微納米加工技術(shù)及其應(yīng)用綜述[J];物理;2006年01期

9 董萼良,康新,陳凡秀,林保平,何小元;利用數(shù)字散斑相關(guān)法測(cè)定聚酰亞胺/SiO_2合成薄膜的力學(xué)性能[J];實(shí)驗(yàn)力學(xué);2005年01期

10 崔錚,陶佳瑞;納米壓印加工技術(shù)發(fā)展綜述[J];世界科技研究與發(fā)展;2004年01期

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